Datasheet > KTC4076_15

KTC4076_15

更新时间： 2024-11-19 01:12:43

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科信 - KEXIN		/
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描述
NPN Transistors

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中文翻译

获取价格

数据手册

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KTC4076_15 数据手册

SMD Type

Transistors

NPN Transistors

KTC4076

■ Features

● Excellent hFE Linearity

● Complementary to KTA2015

1.Base

2.Emitter

3.collector

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Symbol

Rating

Unit

VCBO

VCEO

VEBO

Collector Current - Continuous

Base Current

500

℃

Collector Power Dissipation

Junction Temperature

100

150

Storage Temperature Range

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

Ic= 100uA， I

Ic= 1 mA，I =0

= 100uA， I

E= 0

C= 0

CBO

EBO

CB= 35V , I

EB= 5V , I

= 0

0.1

0.25

1.2

Collector-emitter saturation voltage

Base - emitter saturation voltage

Base - emitter voltage

CE(sat)

BE(sat)

=100mA, I

=10mA

=100mA, I

^CE= 1V, I

CE= 1V, I

=100mA

240

DC current gain

hFE

^CE= 6V, I

=400mA

Collector output capacitance

Transition frequency

^CB= 6V,I

=0,f=1MHz

^CE= 6V, I

= 20mA

300

MHz

■ Classification of hfe

Type

Range

Marking

KTC4076-O

70-140

KTC4076-Y

120-240

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