Datasheet > KTC4077_08

KTC4077_08

更新时间： 2024-09-27 11:32:19

品牌	Logo	应用领域
KEC		晶体晶体管局域网
页数	文件大小	规格书
2页	39K
描述
EPITAXIAL PLANAR NPN TRANSISTOR

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中文翻译

获取价格

数据手册

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KTC4077_08 数据手册

SEMICONDUCTOR

KTC4077

EPITAXIAL PLANAR NPN TRANSISTOR

TECHNICAL DATA

LOW NOISE AMPLIFIER APPLICATION.

FEATURES

· High Voltage : V_CEO=120V.

· Excellent h_FELinearity

DIM MILLIMETERS

2.00 0.20

: h_FE(0.1mA)/h_FE(2mA)=0.95(Typ.).

· High h_FE: h_FE=200∼ 700.

· Low Noise : NF=1dB(Typ.), 10dB(Max.).

· Complementary to KTA2017.

1.25 0.15

0.90+0.10

0.3+0.10/-0.05

2.10 0.20

0.65

0.15+0.1/-0.06

1.30

0.00-0.10

0.70

0.42 0.10

0.10 MIN

MAXIMUM RATING (Ta=25℃)

CHARACTERISTIC

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

SYMBOL

RATING

120

UNIT

1. EMITTER

2. BASE

V_CBO

V_CEO

V_EBO

I_C

3. COLLECTOR

120

100

℃

USM

I_B

Base Current

P_C

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

100

T_j

150

T_stg

-55∼ 150

℃

Marking

Lot No.

Rank

Type Name

ELECTRICAL CHARACTERISTICS (Ta=25℃)

CHARACTERISTIC

Collector Cut-off Current

SYMBOL

I_CBO

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

μA

V_CB=120V, I_E=0

0.1

700

0.3

I_EBO

V_EB=5V, I_C=0

Emitter Cut-off Current

DC Current Gain

μA

h_FE(Note)

V_CE(sat)

f_T

V_CE=6V, I_C=2mA

I_C=10mA, I_B=1mA

V_CE=6V, I_C=1mA

V_CB=10V, I_E=0, f=1MHz

V_CE=6V, I_C=0.1mA

f=1kHz, Rg=10kΩ

200

Collector-Emitter Saturation Voltage

Transition Frequency

MHz

100

4.0

C_ob

Collector Output Capacitance

Noise Figure

1.0

Note : h_FEClassification GR(6):200∼ 400 BL(8):350∼ 700

2008. 8. 29

Revision No : 3

1/2

中文翻译

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