Datasheet > KTC4370AO

KTC4370AO

更新时间： 2024-09-28 14:51:55

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
1页	107K
描述
Transistor

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中文翻译

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技术参数
数据手册

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KTC4370AO 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Base Number Matches：	1

KTC4370AO 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-220F Plastic-Encapsulate Transistors

TO – 220F

KTC4370A TRANSISTOR (NPN)

1. BASE

FEATURES

2. COLLECTOR

3. EMITTER

High Transition Frequency

Complementary to KTA1659A

High Voltage Application

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Value

180

Unit

Collector-Emitter Voltage

Emitter-Base Voltage

180

Collector Current

1.5

P_C

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

℃/W

℃

R_θJA

T_j

62.5

150

T_stg

Storage Temperature

-55~+150

℃

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test

conditions

Min

180

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C=1mA,I_E=0

I_C=10mA,I_B=0

I_E=1mA,I_C=0

V_CB=160V,I_E=0

μA

Emitter cut-off current

I_EBO

V_EB=5V,I_C=0

DC current gain

h_FE

V_CE=5V, I_C=100mA

I_C=500mA,I_B=50mA

V_CE=5V, I_C=500mA

V_CB=10V,I_E=0, f=1MHz

VCE=10V,IC=100mA

240

1.5

Collector-emitter saturation voltage

Base-emitter voltage

V_CE(sat)

V_BE

Collector output capacitance

Transition frequency

C_ob

f_T

100

MHz

CLASSIFICATION OF h_FE

RANK

RANGE

70-140

120-240

A,Dec,2010

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