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KTC4370_15

更新时间: 2024-11-21 01:11:47
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描述
NPN Transistors

KTC4370_15 数据手册

  
DIP Type  
Transistors  
NPN Transistors  
KTC4370  
Unit: mm  
TO-220F  
±0.20  
±0.20  
±0.20  
20  
.
2.54  
8±0  
1
±0.20  
0.70  
φ3.  
Features  
High Transition Frequency  
Complementary to KTA1659  
±0.20  
2.76  
1.47max  
±0.20  
0.50  
±0.20  
0.80  
1. Base  
2. Collector  
3. Emitter  
2.54typ  
2.54typ  
Absolute Maximum Ratings Ta = 25℃  
Parameter  
Collector - Base Voltage  
Collector - Emitter Voltage  
Emitter - Base Voltage  
Collector Current - Continuous  
Base Current  
Symbol  
Rating  
160  
160  
5
Unit  
V
VCBO  
VCEO  
VEBO  
I
C
1.5  
A
I
B
0.15  
20  
P
C
W
Collector Power Dissipation  
Junction Temperature  
Tc = 25℃  
T
J
150  
Storage Temperature Range  
T
stg  
-55 to 150  
Electrical Characteristics Ta = 25℃  
Parameter  
Symbol  
Test Conditions  
Min  
160  
160  
5
Typ  
Max  
Unit  
V
Collector- base breakdown voltage  
Collector- emitter breakdown voltage  
Emitter - base breakdown voltage  
Collector-base cut-off current  
Emitter cut-off current  
VCBO  
VCEO  
VEBO  
Ic= 100uAI  
Ic= 10 mAI  
= 100uAI  
CB= 160V , I  
EB= 5V , I =0  
E
= 0  
B=0  
I
E
C
= 0  
I
CBO  
EBO  
V
V
E= 0  
1
1
uA  
V
I
C
Collector-emitter saturation voltage  
Base - emitter saturation voltage  
Base - emitter voltage  
V
CE(sat)  
BE(sat)  
I
I
C
=500mA, I  
B
=50mA  
=50mA  
1.5  
1.2  
1
V
C
=500mA, I  
B
V
BE  
V
V
V
V
CE= 5V, I  
CE= 5V, I  
C
=500mA  
=100mA  
DC current gain  
hFE  
C
70  
240  
Collector output capacitance  
Transition frequency  
C
ob  
T
CB= 10V,I  
E
=0,f=1MHz  
25  
pF  
f
CE= 10V, I  
C= 100mA  
100  
MHz  
Classification of hfe  
Type  
KTC4370-O  
KTC4370-Y  
120-240  
Range  
70-140  
1
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