Datasheet > KTC4077

KTC4077

更新时间： 2024-11-19 14:55:03

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	672K
描述
SOT-323

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中文翻译

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数据手册

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KTC4077 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-323 Plastic-Encapsulate Transistors

KTC4077 TRANSISTOR (NPN)

FEATURES

SOT–323

z High DC Current Gain

z Complementary to KTA2017

z High Voltage

z Excellent h_FELinearity

z Low Noise

APPLICATIONS

1. BASE

z General Purpose Amplification

2. EMITTER

3. COLLECTOR

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

120

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

100

℃/W

I_B

Base Current

P_C

Collector Power Dissipation

Thermal Resistance from Junction to Ambient

100

1250

R_ΘJA

Operation Junction and

Storage Temperature Range

T_J,T_stg

-55～+150

℃

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

120

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBOI_C=100µA, I_E=0

V_(BR)CEOI_C=1mA, I_B=0

V_(BR)EBOI_E=10µA, I_C=0

I_CBO

I_EBO

h_FE

V_CB=120V, I_E=0

V_EB=5V, I_C=0

100

700

0.3

Emitter cut-off current

DC current gain

V_CE=6V, I_C=2mA

200

Collector-emitter saturation voltage

Transition frequency

V_CE(sat)

f_T

I_C=10mA, I_B=1mA

V_CE=6V, I_C=1mA

100

MHz

Collector output capacitance

C_ob

V_CB=10V, I_E=0, f=1MHz

VCE=6V, IC=0.1mA,f=1kHz,

Rg=10kΩ

Noise Figure

CLASSIFICATION OF h_FE

RANK

200-400

DGR

350-700

DBL

RANGE

MARKING

www.jscj-elec.com

Rev. - 2.0

12 3 4

中文翻译

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