Datasheet > KTC4076

KTC4076

更新时间： 2024-09-27 11:32:19

品牌	Logo	应用领域
金誉半导体 - HTSEMI		晶体晶体管
页数	文件大小	规格书
1页	480K
描述
TRANSISTOR (NPN)

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中文翻译

获取价格

数据手册

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KTC4076 数据手册

KTC4076

TRANSISTOR (NPN)

FEATURES

 Excellent h_FELinearity

 Complementary to KTA2015

SOT–323

APPLICATIONS

 General Purpose Switching

1. BASE

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

2. EMITTER

3. COLLECTOR

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

500

℃/W

℃

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

100

P_C

R_ΘJA

T_j

1250

150

Storage Temperature

T_stg

-55～+150

℃

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

V_(BR)CBOI_C=100µA, I_E=0

V_(BR)CEOI_C=1mA, I_B=0

V_(BR)EBOI_E=100µA, I_C=0

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_CBO

I_EBO

V_CB=35V, I_E=0

V_EB=5V, I_C=0

0.1

240

µA

Emitter cut-off current

h_FE(1)

h_FE(2)

V_CE(sat)

V_BE

V_CE=1V, I_C=100mA

V_CE=6V, I_C=400mA

I_C=100mA, I_B=10mA

V_CE=1V, I_C=100mA

V_CB=6V,I_C=20mA ,

V_CB=6V, I_E=0, f=1MHz

DC current gain

0.25

Collector-emitter saturation voltage

Base-emitter voltage

f_T

300

MHz

Transition frequency

C_ob

Collector output capacitance

CLASSIFICATION OF h_FE(1), h_FE(2)

RANK

RANG

h_FE(1)

h_FE(2)

70–140

25Min

120–240

40Min

MARKING

JinYu

semiconductor

www.htsemi.com

Date:2011/05

中文翻译

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