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KTC4075-GR-TP-HF PDF预览

KTC4075-GR-TP-HF

更新时间: 2024-11-01 19:59:07
品牌 Logo 应用领域
美微科 - MCC /
页数 文件大小 规格书
4页 366K
描述
Small Signal Bipolar Transistor,

KTC4075-GR-TP-HF 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:,Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.61
Base Number Matches:1

KTC4075-GR-TP-HF 数据手册

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KTC4075-O  
KTC4075-Y  
KTC4075-GR  
KTC4075-BL  
M C C  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
Features  
NPN  
·
Lead Free Finish/RoHS Compliant ("P" Suffix designates  
RoHS Compliant. See ordering information)  
Plastic-Encapsulate  
Transistors  
·
·
Complementary to KTA2014  
Epoxy meets UL 94 V-0 flammability rating  
Moisure Sensitivity Level 1  
·
Halogen free available upon request by adding suffix "-HF"  
Maximum Ratings  
Symbol  
Rating  
Rating  
50  
60  
Unit  
V
SOT-323  
VCEO  
VCBO  
VEBO  
IC  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
A
V
5
V
D
C
150  
100  
150  
mA  
mW  
к
PC  
Collector power dissipation  
Junction Temperature  
TJ  
C
B
TSTG  
Storage Temperature  
-55 to +150  
к
E
B
F
E
Electrical Characteristics @ 25к Unless Otherwise Specified  
Symbol  
Parameter  
Min  
Typ  
Max  
Units  
OFF CHARACTERISTICS  
H
G
J
ICBO  
Collector Cutoff Current  
(VCB= 60Vdc)  
---  
---  
---  
---  
100  
100  
nAdc  
nAdc  
K
IEBO  
Emitter Cutoff Current  
(VEB= 5.0Vdc)  
DIMENSIONS  
INCHES  
ON CHARACTERISTICS  
MM  
BVCBO  
BVCEO  
BVEBO  
hFE  
Collector-base breakdown voltage  
(IC=100µAdc)  
60  
---  
---  
Vdc  
Vdc  
Vdc  
---  
DIM  
A
B
C
D
E
MIN  
.071  
.045  
.083  
.026 Nominal  
.047  
.012  
.000  
.035  
.004  
.006  
MAX  
.087  
.053  
.096  
MIN  
1.80  
1.15  
2.10  
MAX  
2.20  
1.35  
2.45  
NOTE  
Collector-emitter  
voltage (IC= 1mAdc)  
breakdown  
50  
5
---  
---  
---  
---  
0.65Nominal  
1.20  
.055  
.016  
.004  
.039  
.010  
.016  
1.40  
.40  
.100  
1.00  
.250  
.40  
F
.30  
.000  
.90  
.100  
.15  
Emitter-base breakdown voltage  
(IE=100µAdc)  
G
H
J
K
DC Current Gain  
(IC=2mAdc, VCE= 6.0Vdc)  
70  
---  
700  
Suggested Solder  
Pad Layout  
0.70  
VCE(sat)  
Collector Saturation Voltage  
(IC=100mAdc, IB=10.0mAdc)  
---  
---  
0.25  
Vdc  
pF  
Cob  
Output Capacitance  
(VCE= 10.0Vdc, IE=0, f=1.0MHz)  
---  
---  
---  
3.5  
---  
0.90  
fT  
Gain Bandwidth product  
(VCE=10Vdc, IC=1mAdc)  
80  
MHz  
1.90  
mm  
h
FE CLASSIFICATION  
0.65  
Rank  
Marking  
Range  
O
LO  
Y
LY  
120-240  
GR  
LG  
200-400  
BL  
0.65  
L
R
BL  
350-700  
70-140  
www.mccsemi.com  
1 of 4  
Revision: C  
2013/09/24  

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