Datasheet > KTC4075-SOT-323

KTC4075-SOT-323

更新时间： 2024-11-01 11:32:19

品牌	Logo	应用领域
江苏长电/长晶 - CJ		晶体晶体管
页数	文件大小	规格书
3页	182K
描述
TRANSISTOR (NPN)

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中文翻译

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数据手册

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KTC4075-SOT-323 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-323 Plastic-Encapsulate Transistors

SOT-323

KTC4075 TRANSISTOR (NPN)

FEATURES

1. BASE

2. EMITTER

3. COLLECTOR

Excellent hFE linearity

High hFE

Low Noise

Complementary to KTA2014

MAXIMUM RATINGS* T_A=25℃ unless otherwise noted

Symbol

Parameter

Value

Units

V_CBO

V_CEO

V_EBO

I_C

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Total Device Dissipation

150

100

-55-125

P_D

T_J, T_stg

Junction and Storage Temperature

℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃

unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

I_C= 100µA, I_E=0

I_C= 1mA, I_B=0

I_E= 100µA, I_C=0

V_CB=60V, I_E=0

0.1

µA

I_EBO

V_EB=5V, I_C=0

DC current gain

h_FE

V_CE= 6V, I_C=2mA

I_C=100mA, I_B= 10mA

700

0.25

Collector-emitter saturation voltage

Transition frequency

V_CEsat

V_CE=10V, I_C= 1mA

MHz

f_T

Collector output capacitance

Noise figure

V_CE=10V, I_E=0, f=1MHz

C_ob

3.5

V_CE=6V,I_E=0.1mA, f=1KHz,R_G=10KΩ

CLASSIFICATION OF h_FE

Rank

70~140

200~400

LGR

Range

Marking

120~240

350~700

LBL

12 3

中文翻译

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