Datasheet > KTC4075

KTC4075

更新时间： 2024-10-15 18:09:47

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
3页	1437K
描述
PNP Transistor

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中文翻译

获取价格

数据手册

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KTC4075 数据手册

SMD Type

Transistors

NPN Transistors

KTC4075

■ Features

● Excellent hFE Linearity

● Low Noise

● Complementary to KTA2014

1.Base

2.Emitter

3.collector

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Symbol

Rating

Unit

VCBO

VCEO

VEBO

Collector Current - Continuous

Base Current

150

℃

Collector Power Dissipation

Junction Temperature

100

150

Storage Temperature Range

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

Ic= 100uA， I

Ic= 1 mA，I =0

= 100uA， I

E= 0

C= 0

CBO

EBO

CB= 60V , I

EB= 5V , I

= 0

0.1

0.25

1.2

700

Collector-emitter saturation voltage

Base - emitter saturation voltage

DC current gain

CE(sat)

BE(sat)

=100mA, I

=10mA

=100mA, I

hFE

CE= 6V, I

=2mA

= 0.1 mA,Rg=10 KΩ,f=1KHz

=0,f=1MHz

= 1mA

Noise Figure

CE= 6V, I

Collector output capacitance

Transition frequency

CB= 10V,I

3.5

^CE= 10V, I

MHz

■ Classification of hfe

Type

Range

Marking

KTC4075-O

70-140

KTC4075-Y

120-240

KTC4075-GR

200-400

KTC4075-BL

350-700

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