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KTB1366

更新时间: 2024-11-20 12:36:43
品牌 Logo 应用领域
永而佳 - WINNERJOIN 晶体晶体管
页数 文件大小 规格书
1页 71K
描述
TRANSISTOR (PNP)

KTB1366 数据手册

  
RoHS  
KTB1366  
TO-220F  
1. BASE  
KTB1366 TRANSISTOR (PNP)  
2. COLLECTOR  
3. EMITTER  
FEATURES  
Power dissipation  
PCM:  
2
W (Tamb=25)  
1 2 3  
Collector current  
ICM:  
-3  
A
V
Collector-base voltage  
V(BR)CBO  
:
-60  
Operating and storage junction temperature range  
TJ, Tstg: -55to +150℃  
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Test conditions  
Ic=-1mA, IE=0  
MIN  
-60  
-60  
-7  
TYP  
MAX  
UNIT  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
V
Ic=-50mA, IB=0  
IE=-1mA, IC=0  
V
µA  
µA  
VCB=-60V, IE=0  
-100  
-100  
200  
IEBO  
Emitter cut-off current  
VEB=-7V, IC=0  
hFE(1)  
VCE=-5V, IC=-0.5A  
60  
20  
DC current gain  
hFE(2)  
VCE=-5V, IC=-3A  
VCE(sat)  
V
V
Collector-emitter saturation voltage  
Base-emitter voltage  
Transition frequency  
Collector output capacitance  
Fall time  
IC=-2A, IB=-0.2A  
-1  
-1  
VBE  
VCE=-5V, IC=-0.5A  
MHz  
pF  
µs  
fT  
VCE=-5V, IC=-0.5A  
9
Cob  
tf  
V
CB=-10V, IE=0, f=1MHz  
150  
0.5  
IC=-2A, IB1=-IB2=-0.2A  
CC=-30V  
V
ts  
µs  
Storage time  
1.7  
WEJ ELECTRONIC CO.,LTD  
CLASSIFICATION OF hFE(1)  
Rank  
O
Y
Range  
Marking  
60-120  
100-200  
Http:// www.wej.cn  
E-mail:wej@yongerjia.com  
WEJ ELECTRONIC CO.  

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