Datasheet > KTB1367O

KTB1367O

更新时间： 2024-09-27 09:16:51

品牌	Logo	应用领域
江苏长电/长晶 - CJ		局域网晶体管
页数	文件大小	规格书
1页	107K
描述
Transistor

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中文翻译

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技术参数
数据手册

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KTB1367O 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.6
Base Number Matches：	1

KTB1367O 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-220F Plastic-Encapsulate Transistors

TO – 220F

KTB1367 TRANSISTOR (PNP)

1. BASE

FEATURES

2. COLLECTOR

3. EMITTER

Low Collector-Emitter Saturation Voltage

General Purpose Applications

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Value

-100

-5

Unit

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

-5

P_C

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

℃/W

℃

R_θJA

T_j

62.5

150

T_stg

Storage Temperature

-55~+150

℃

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

-100

-5

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBO

I_C=-1mA,I_E=0

V_(BR)CEO

I_C=-50mA,I_B=0

I_E=-10mA,I_C=0

V_CB=-100V,I_E=0

V_CE=-50V,I_B=0

V_EB=-5V,I_C=0

V_(BR)EBO

I_CBO

I_CEO

I_EBO

-100

-500

-1

μA

Collector cut-off current

Emitter cut-off current

h_FE(1)

h_FE(2)

V_CE(sat)

V_BE

V_CE=-5V, I_C=-1A

V_CE=-5V, I_C=-4A

I_C=-4A,I_B=-0.4A

V_CE=-5V, I_C=-4A

V_CB=-10V,I_E=0, f=1MHz

VCE=-5V,IC=-1A

240

DC current gain

Collector-emitter saturation voltage

Base-emitter voltage

-2

-1.5

270

Collector output capacitance

Transition frequency

C_ob

f_T

MHz

*Pulse test

CLASSIFICATION OF h_{FE (1)}

RANK

RANGE

40-80

70-140

120-240

A,Dec,2010

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