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KTA1275

更新时间: 2024-11-18 12:06:03
品牌 Logo 应用领域
永而佳 - WINNERJOIN 晶体晶体管放大器
页数 文件大小 规格书
1页 123K
描述
TRANSISTOR (PNP)

KTA1275 数据手册

  
RoHS  
KTA1275  
TO-92L  
KTA1275 TRANSISTOR (PNP)  
1. EMITTER  
2. COLLECTOR  
3. BASE  
FEATURES  
Power dissipation  
PCM:  
1
W (Tamb=25)  
Collector current  
ICM:  
-1  
-160  
A
Collector-base voltage  
V(BR)CBO  
:
V
1 2 3  
Operating and storage junction temperature range  
TJ, Tstg: -55to +150℃  
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Test conditions  
Ic=-1mA, IE=0  
MIN  
-160  
-160  
-6  
TYP  
MAX  
UNIT  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
Emitter cut-off current  
V
Ic=-10mA, IB=0  
IE=-1mA, IC=0  
V
µA  
µA  
VCB=-150V, IE=0  
-1  
-1  
IEBO  
VEB=-6V, IC=0  
hFE(1)  
DC current gain  
V
CE=-5V, IC=-200mA  
60  
320  
-1.5  
-0.75  
VCE(sat)  
VBE  
V
V
Collector-emitter saturation voltage  
Base-emitter voltage  
IC=-500mA, IB=-50mA  
CE=-5V, IC=-5mA  
-0.45  
15  
V
MHz  
pF  
Transition frequency  
fT  
VCE=-5V, IC=-200mA  
CB=-10V, IE=0, f=1MHz  
Cob  
35  
Collector output capacitance  
V
CLASSIFICATION OF hFE(1)  
Rank  
R
O
Y
Range  
60-120  
100-200  
160-320  
WEJ ELECTRONIC CO.,LTD  
Marking  
Http:// www.wej.cn  
E-mail:wej@yongerjia.com  
WEJ ELECTRONIC CO.  

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