Datasheet > KTA1281

KTA1281

更新时间： 2024-02-11 23:07:48

品牌	Logo	应用领域
江苏长电/长晶 - CJ		开关晶体管
页数	文件大小	规格书
4页	95K
描述
Transistor

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中文翻译

获取价格

技术参数
数据手册

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KTA1281 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.57
Base Number Matches：	1

KTA1281 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-92L Plastic-Encapsulate Transistors

TO-92L

KTA1281 TRANSISTOR (PNP)

1. EMITTER

2. COLLECTOR

3. BASE

FEATURES

Low Collector Saturation Voltage: V_CE(sat)=-0.5V(Max.)(I_C=-1A)

High Speed Switching time: t_stg=1.0 μS(Typ.).

Complementary to KTC3209.

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

1 2 3

Symbol

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Value

Units

V_CBO

V_CEO

V_EBO

I_C

-50

-5

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

-2

P_C

T_J

150

-55-150

℃

Storage Temperature

T_stg

ELECTRICAL CHARACTERISTICS (Tamb=25℃

unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

-50

-5

TYP

MAX

UNIT

V_(BR)CBOI_C= -100 uA, I_E=0

V_(BR)CEOI_C= -10mA, I_B=0

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)EBO

I_CBO

I_E= -100μA, I_C=0

V_CB= -50 V , I_E=0

V_EB= -5V , I_C=0

-0.1

240

μA

Emitter cut-off current

I_EBO

h_FE(1)

h_FE(2)

V_CE= -2V, I_C= -0.5A

V_CE= -2V, I_C= -1.5A

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

Out capacitance

V_CE(sat) I_C=-1A, I_B= -0.05A

V_BE(sat) I_C=-1A, I_B= -0.05A

-0.5

-1.2

f_T

C_ob

t_on

t_s

V_CE=-2V, I_C=-0.5A

100

MHz

V_CB= -10 V , I_E=0 , f=1MH_Z

Turn-on time

0.1

V_CC=-30V,I_B1=-I_B2=-0.05A,

I_C=-1A

Storage time

Fall time

t_f

0.1

CLASSIFICATION OF h_FE(1)

Rank

Range

70-140

120 - 240

12 3 4

中文翻译

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