Datasheet > KTA1279_05

KTA1279_05

更新时间： 2024-11-18 11:57:19

品牌	Logo	应用领域
KEC		晶体晶体管局域网
页数	文件大小	规格书
2页	41K
描述
EPITAXIAL PLANAR PNP TRANSISTOR

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中文翻译

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数据手册

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KTA1279_05 数据手册

SEMICONDUCTOR

KTA1279

EPITAXIAL PLANAR PNP TRANSISTOR

TECHNICAL DATA

HIGH VOLTAGE APPLICATION.

TELEPHONE APPLICATION.

MAXIMUM RATING (Ta=25

CHARACTERISTIC

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

)

DIM MILLIMETERS

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

RATING

-300

-5.0

UNIT

4.70 MAX

4.80 MAX

3.70 MAX

0.45

1.00

1.27

0.85

0.45

14.00 +0.50

-500

500

0.55 MAX

2.30

I_E

Emitter Current

0.45 MAX

1.00

P_C

Collector Power Dissipation

Junction Temperature

Storage Temperature

625

T_j

150

1. EMITTER

2. COLLECTOR

3. BASE

T_stg

-55 150

TO-92

ELECTRICAL CHARACTERISTICS (Ta=25

)

CHARACTERISTIC

Collector Cut-off Current

Emitter Cut-off Current

SYMBOL

V_(BR)CBO

V_(BR)CEO

TEST CONDITION

MIN.

-300

TYP.

MAX.

UNIT

I_C=-100 A, I_E=0

I_C=-1.0mA, I_B=0

I_C=-1.0mA, V_CE=-10V

I_C=-10mA, V_CE=-10V

I_C=-30mA, V_CE=-10V

I_C=-20mA, I_B=-2.0mA

h_FE

DC Current Gain

V_CE(sat)

V_BE(sat)

f_T

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Transition Frequency

-0.5

-0.9

V_CE=-20V, I_C=-10mA, f=100MHz

V_CB=-20V, I_E=0, f=1MHz

MHz

C_ob

Collector Output Capacitance

6.0

Note :* Pulse test : PW 300 S, Duty Cycle 2%

2005. 8. 30

Revision No : 1

1/2

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