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KTA1281-Y PDF预览

KTA1281-Y

更新时间: 2024-11-21 01:14:11
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科信 - KEXIN /
页数 文件大小 规格书
3页 1819K
描述
PNP Transistors

KTA1281-Y 数据手册

 浏览型号KTA1281-Y的Datasheet PDF文件第2页浏览型号KTA1281-Y的Datasheet PDF文件第3页 
DIP Type  
Transistors  
PNP Transistors  
KTA1281  
TO-92L  
Unit:mm  
4.9 ± 0.2  
0.7 ±0.1  
Features  
0.45 ±0.1  
Low Collector Saturation Voltage  
High Speed Switching Time  
Comlementary to KTC3209  
2
1
3
1.27  
2.54 ±0.1  
1.60 (max)  
Emitter  
1.  
2.Collector  
3.Base  
4.0(min)  
Absolute Maximum Ratings Ta = 25℃  
Parameter  
Collector - Base Voltage  
Collector - Emitter Voltage  
Emitter - Base Voltage  
Symbol  
Rating  
-50  
-50  
-5  
Unit  
V
VCBO  
VCEO  
VEBO  
Collector Current - Continuous  
Collector Power Dissipation  
Junction Temperature  
I
C
-2  
A
P
C
1
W
T
J
150  
Storage Temperature range  
T
stg  
-55 to 150  
Electrical Characteristics Ta = 25℃  
Parameter  
Symbol  
Test Conditions  
Min  
Typ  
Max  
Unit  
Collector- base breakdown voltage  
Collector- emitter breakdown voltage  
Emitter - base breakdown voltage  
Collector-base cut-off current  
Emitter cut-off current  
V
V
V
CBO  
CEO  
EBO  
-50  
-50  
-5  
Ic= -100 uAI  
Ic= -10 mAI =0  
= -100 uAI =0  
CB= -50V , I =0  
EB= -5V , I =0  
E=0  
V
B
I
E
C
I
CBO  
EBO  
V
V
E
-0.1  
-0.1  
-0.5  
-1.2  
240  
uA  
V
I
C
Collector-emitter saturation voltage  
Base - emitter saturation voltage  
V
CE(sat)  
BE(sat)  
I
I
C
=-1 A, I  
B
=-50mA  
=-50mA  
V
C=-1 A, I  
B
hFE(1)  
V
V
CE= -2V, I  
CE= -2V, I  
C
= -500mA  
= -1.5 A  
70  
40  
DC current gain  
hFE(2)  
C
Turn On Time  
Storage Time  
Fall Time  
t
on  
0.1  
1
us  
t
stg  
t
f
0.1  
Collector output capacitance  
Transition frequency  
C
ob  
T
V
V
CB= -10V, I  
E
= 0,f=1MHz  
40  
pF  
f
CE= -2V, I = -500mA  
C
100  
MHz  
Classification of hfe(1)  
Type  
KTA1281-O  
KTA1281-Y  
120-240  
Range  
70-140  
1
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Collector Power Dissipation: PC=200mW