Datasheet > KTA1283

KTA1283

更新时间： 2024-01-18 07:36:58

品牌	Logo	应用领域
KEC		晶体晶体管局域网
页数	文件大小	规格书
2页	72K
描述
EPITAXIAL PLANAR PNP TRANSISTOR (HIGH CURRENT)

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中文翻译

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数据手册

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KTA1283 数据手册

SEMICONDUCTOR

KTA1283

EPITAXIAL PLANAR PNP TRANSISTOR

TECHNICAL DATA

HIGH CURRENT APPLICATION.

FEATURE

ᴌComplementary to KTC3211.

DIM MILLIMETERS

4.70 MAX

4.80 MAX

3.70 MAX

0.45

1.00

1.27

MAXIMUM RATING (Ta=25ᴱ)

CHARACTERISTIC

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

RATING

-40

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

0.85

0.45

-25

14.00 +0.50

0.55 MAX

2.30

0.45 MAX

1.00

-6

-1.5

P_C

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

625

ᴱ

1. EMITTER

2. COLLECTOR

3. BASE

T_j

150

T_stg

-55ᴕ150

ᴱ

TO-92

ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)

CHARACTERISTIC SYMBOL

I_CBO

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

V_CB=-35V, I_E=0

Collector Cut-off Current

-100

I_EBO

V_(BR)CBO

V_(BR)CEO

h_FE(1)

V_EB=-6V, I_C=0

Emitter Cut-off Current

-100

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

I_C=-100ỌA, I_E=0

-40

-25

I_C=-2mA, I_B=0

V_CE=-1V, I_C=-5mA

V_CE=-1V, I_C=-100mA

V_CE=-1V, I_C=-800mA

I_C=-800mA, I_B=-80mA

V_CE=-1V, I_C=-10mA

V_CE=-10V, I_C=-50mA

170

160

h_FE(2) (Note)

h_FE(3)

DC Current Gain

300

V_CE(sat)

V_BE(sat)

V_BE

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Base-Emitter Voltage

-0.28

-0.98

-0.66

200

-0.5

-1.2

-1.0

f_T

Transition Frequency

100

MHz

C_ob

V_CB=-10V, f=1MHz, I_E=0

Collector Output Capacitance

Note : h_FE(2) Classification O:85ᴕ160 , Y:120ᴕ200 , GR:160ᴕ300

1999. 11. 30

Revision No : 2

1/2

中文翻译

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