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KTA1385D PDF预览

KTA1385D

更新时间: 2024-10-31 22:34:35
品牌 Logo 应用领域
KEC 晶体晶体管局域网
页数 文件大小 规格书
3页 403K
描述
EPITAXIAL PLANAR PNP TRANSISTOR (LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT)

KTA1385D 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:DPAK-3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.7
最大集电极电流 (IC):5 A集电极-发射极最大电压:60 V
配置:SINGLE最小直流电流增益 (hFE):50
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
元件数量:1端子数量:2
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):263
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:YES端子面层:PURE TIN
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:11晶体管元件材料:SILICON
最大关闭时间(toff):3500 ns最大开启时间(吨):1000 ns
Base Number Matches:1

KTA1385D 数据手册

 浏览型号KTA1385D的Datasheet PDF文件第2页浏览型号KTA1385D的Datasheet PDF文件第3页 
SEMICONDUCTOR  
KTA1385D/L  
EPITAXIAL PLANAR PNP TRANSISTOR  
TECHNICAL DATA  
LOW COLLECTOR SATURATION VOLTAGE  
LARGE CURRENT  
A
C
I
J
FEATURES  
DIM MILLIMETERS  
_
6.60+0.2  
_
6.10+0.2  
A
B
C
D
E
F
High Power Dissipation : PC=1.3W(Ta=25  
Complementary to KTC5103D/L  
)
_
5.0+0.2  
_
1.10+0.2  
_
2.70+0.2  
_
2.30+0.1  
H
I
1.00 MAX  
_
2.30+0.2  
_
0.5+0.1  
_
2.00+0.20  
_
0.50+0.10  
_
0.91+ 0.10  
_
0.90+0.1  
_
1.00+0.10  
J
H
K
L
M
O
P
P
F
L
F
MAXIMUM RATING (Ta=25  
CHARACTERISTIC  
)
1
2
3
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
RATING  
UNIT  
V
Q
0.95 MAX  
1. BASE  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
-60  
-60  
2. COLLECTOR  
3. EMITTER  
V
-7  
V
DPAK  
DC  
Collector Current  
Pulse *  
-5  
A
A
ICP  
-8  
IB  
Base Current  
-1  
A
C
I
J
1.0  
Ta=25  
Tc=25  
Collector Power  
Dissipation  
PC  
W
15  
DIM MILLIMETERS  
_
6.60 0.2  
+
_
6.10 0.2  
+
A
B
C
D
E
F
Tj  
Junction Temperature  
150  
-55 150  
_
+
5.0 0.2  
_
1.10 0.2  
+
P
H
G
Tstg  
_
Storage Temperature Range  
9.50 0.6  
_
2.30+0.1  
+
_
+
0.1  
G
H
I
0.76  
* PW 10ms, Duty Cycle 50%  
1.0 MAX  
_
2.30+0.2  
_
0.5 0.1  
+
_
2.0 0.2  
+
J
F
F
L
K
L
P
_
+
0.50 0.1  
_
+
0.1  
1.0  
0.90 MAX  
1
2
3
Q
1. BASE  
2. COLLECTOR  
3. EMITTER  
IPAK  
ELECTRICAL CHARACTERISTICS (Ta=25  
)
CHARACTERISTIC  
Collector Cut-off Current  
Emitter Cut-off Current  
SYMBOL  
ICBO  
IEBO  
hFE  
TEST CONDITION  
MIN.  
TYP.  
MAX.  
-10  
-10  
-
UNIT  
A
VCB=-50V, IE=0  
VEB=-7V, IC=0  
-
-
-
-
A
1
VCE=-1V, IC=-0.1A  
60  
160  
50  
-
-
-
hFE2 (Note) VCE=-1V, IC=-2A  
DC Current Gain  
*
400  
-
hFE  
3
VCE=-2V, IC=-5A  
IC=-2A, IB=-0.2A  
IC=-2A, IB=-0.2A  
-
VCE(sat)  
VBE(sat)  
Collector-Emitter Saturation Voltage *  
-0.14  
-0.9  
-0.3  
-1.2  
V
V
Base-Emitter Saturation Voltage  
*
-
OUTPUT  
ton  
tstg  
tf  
Turn On Time  
-
-
-
0.15  
0.78  
0.18  
1
2.5  
1
I
B2  
INPUT  
I
I
B1  
0
I
B1  
Switching  
Storage Time  
Time  
S
B2  
20µsec  
-I =I =0.2A  
B2  
B1  
<
DUTY CYCLE 1%  
Fall Time  
V
=-10V  
CC  
=
* Pulse test : PW 350 S, Duty Cycle 2% Pulse  
Note) hFE(2) Classification : O:160 320, Y:200 400.  
2003. 3. 27  
Revision No : 3  
1/3  

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Collector Power Dissipation: PC=150mW