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KTA1504-Y

更新时间: 2024-11-19 02:55:39
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描述
PNP Transistors

KTA1504-Y 数据手册

  
SMD Type  
Transistors  
PNP Transistors  
KTA1504  
SOT-23  
Unit: mm  
+0.1  
-0.1  
2.9  
0.4  
+0.1  
-0.1  
3
Features  
Excellent hFE Linearity  
Low Noise  
1
2
+0.1  
-0.1  
+0.05  
-0.01  
0.95  
0.1  
Complementary to KTC3875  
+0.1  
-0.1  
1.9  
1.Base  
2.Emitter  
3.collector  
Absolute Maximum Ratings Ta = 25℃  
Parameter  
Collector - Base Voltage  
Symbol  
Rating  
-50  
Unit  
V
VCBO  
VCEO  
VEBO  
Collector - Emitter Voltage  
Emitter - Base Voltage  
-50  
-5  
Collector Current - Continuous  
Base Current  
I
C
-150  
-30  
mA  
I
B
Collector Power Dissipation  
Thermal Resistance From Junction To Ambient  
Junction Temperature  
P
C
150  
833  
150  
mW  
RΘJA  
/W  
T
J
Storage Temperature range  
T
stg  
-55 to 150  
Electrical Characteristics Ta = 25℃  
Parameter  
Symbol  
Test Conditions  
Ic= -100 μAI =0  
Ic= -1 mAI =0  
= -100μAI  
Min  
-50  
-50  
-5  
Typ  
Max  
Unit  
V
Collector- base breakdown voltage  
Collector- emitter breakdown voltage  
Emitter - base breakdown voltage  
Collector-base cut-off current  
Emitter cut-off current  
VCBO  
VCEO  
VEBO  
E
B
I
E
C
=0  
I
CBO  
EBO  
V
V
CB= -50 V , I  
EB= -5V , I  
E
=0  
-100  
-100  
-0.3  
-1.2  
400  
7
nA  
V
I
C
=0  
Collector-emitter saturation voltage  
Base - emitter saturation voltage  
DC current gain  
V
CE(sat)  
BE(sat)  
I
I
C
=-100 mA, I  
B
=-10mA  
=-10mA  
V
C=-100 mA, I  
B
hFE  
V
V
V
CE= -6V, I  
C
= -2mA  
= 0,f=1MHz  
= -1mA  
70  
80  
Collector output capacitance  
Transition frequency  
C
ob  
T
CB= -10V, I  
CE= -10V, I  
E
pF  
f
C
MHz  
Classification of hfe  
Type  
Range  
Marking  
KTA1504-O  
70-140  
KTA1504-Y  
120-240  
ASY  
KTA1504-G  
200-400  
ASG  
ASO  
1
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