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KTA1504-Y-TP-HF PDF预览

KTA1504-Y-TP-HF

更新时间: 2024-11-21 20:47:55
品牌 Logo 应用领域
美微科 - MCC 光电二极管晶体管
页数 文件大小 规格书
2页 285K
描述
Small Signal Bipolar Transistor, 0.15A I(C), PNP,

KTA1504-Y-TP-HF 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-G3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.63
其他特性:LOW NOISE最大集电极电流 (IC):0.15 A
集电极-发射极最大电压:50 V配置:SINGLE
最小直流电流增益 (hFE):120JESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:PNP最大功率耗散 (Abs):0.15 W
子类别:Other Transistors表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管元件材料:SILICON标称过渡频率 (fT):80 MHz
Base Number Matches:1

KTA1504-Y-TP-HF 数据手册

 浏览型号KTA1504-Y-TP-HF的Datasheet PDF文件第2页 
M C C  
KTA1504-O  
KTA1504-Y  
KTA1504-GR  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
Features  
·
·
·
Halogen free available upon request by adding suffix "-HF"  
Complementary to KTC3875  
Low Noise  
PNP Silicon  
Epitaxial Transistors  
·
Epoxy meets UL 94 V-0 flammability rating  
·
·
Moisure Sensitivity Level 1  
Lead Free Finish/RoHS Compliant ("P" Suffix designates  
RoHS Compliant. See ordering information)  
SOT-23  
Maximum Ratings @ Ta = 25?(unless otherwise noted)  
A
Symbol  
Parameter  
Value  
Unit  
D
C
IC  
Collector Current  
-0.15  
0.15  
A
PD  
Collector Power Dissipation  
W
R/W  
R
B
C
Thermal Resistance From Junction To Ambient  
RΘ  
833  
JA  
E
B
TJ  
Junction Temperature  
150  
F
E
R
TSTG  
Storage Temperature Range  
-55 to +150  
Electrical Characteristics @ 25OC Unless Otherwise Specified  
Symbol  
OFF CHARACTERISTICS  
Parameter  
Min TYPE Max  
Units  
H
G
J
Collector-Emitter Breakdown Voltage  
(IC=-1mAdc,IB=0)  
Collector-Base Breakdown Voltage  
(IC=-100uAdc,IE=0)  
V(BR)CEO  
-50  
-50  
V
K
V(BR)CBO  
V
DIMENSIONS  
Collector-Base Breakdown Voltage  
(IE=-100uAdc,IC=0)  
Collector-Base Cutoff Current  
(VCB=-50Vdc, IE=0)  
INCHES  
MIN  
MM  
-5.0  
-0.1  
-0.1  
V
V(BR)EBO  
ICBO  
DIM  
A
B
C
D
E
MAX  
MIN  
2.80  
2.10  
1.20  
.89  
1.78  
.45  
.013  
.89  
MAX  
NOTE  
.110  
.083  
.047  
.035  
.070  
.018  
.0005  
.035  
.003  
.015  
.120  
.104  
.055  
.041  
.081  
.024  
.0039  
.044  
.007  
.020  
3.04  
2.64  
1.40  
1.03  
2.05  
.60  
.100  
1.12  
.180  
.51  
µAdc  
uAdc  
Emitter-Base Cutoff Current  
(VEB=-5.0Vdc, IC=0)  
ON CHARACTERISTICS  
IEBO  
F
G
H
J
DC Current Gain  
70  
80  
400  
-0.3  
FE  
H
(IC=-2mAdc, VCE=-6.0Vdc)  
Collector-Emitter Saturation Voltage  
(IC=-100mAdc, IB=-10mAdc)  
Transition Frequency  
.085  
.37  
K
VCE(sat)  
Vdc  
Suggested Solder  
Pad Layout  
.031  
.800  
ꢀ  
MHZ  
pF  
(VCE=-10Vdc,IC=-1mAdc)  
Cob  
7
(VCB=-10Vdc,IE=0,f=1MHZ)  
.035  
.900  
.079  
2.000  
inches  
mm  
CLASSIFICATION OF hFE  
Rank  
O
Y
120-240  
ASY  
GR  
Range  
70-140  
ASO  
200-400  
.037  
.950  
Marking  
ASG  
.037  
.950  
www.mccsemi.com  
Revision: B  
2013/01/01  
1 of 2  

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