Datasheet > KTA1504S-Y

KTA1504S-Y

更新时间： 2024-11-01 05:41:03

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管
页数	文件大小	规格书
1页	48K
描述
Epitaxial Planar PNP Transistor

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中文翻译

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数据手册

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KTA1504S-Y 数据手册

SMD Type

Transistors

Epitaxial Planar PNP Transistor

KTA1504S-Y

SOT-23

Unit: mm

+0.1

2.9_-0.1

+0.1

0.4_-0.1

■ Features

● Collector Power Dissipation: PC=150mW

● Collector Current: IC=-150mA

+0.1

+0.05

0.95_-0.1

0.1_-0.01

+0.1

1.9_-0.1

1.Base

2.Emitter

3.collector

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Symbol

VCEO

VCBO

VEBO

Rating

-50

Unit

-50

-5

Collector Current

-150

150

℃

Collector Power Dissipation

Junction Temperature

150

Storage Temperature Range

Tstg

-55 to 150

℃

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test conditions

Min

Typ Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector Cut-off Current

Emitter Cut-off Current

V(BR)CBO IC=-100μA,IE=0

V(BR)CEO IC=-1mA,IB=0

V(BR)EBO IE=-100μA,IC=0

-50

-5

ICBO

IEBO

hFE

VCB=-50V, IE=0

VEB=-5V, IC=0

-0.1

240

μA

DC Current Gain

VCE=-6V, IC=-2mA

120

Collector-Emitter Saturation Voltage

Transition Frequency

VCE(sat) IC=-100mA, IB=-10mA

-0.1

-0.3

MHz

VCE=-10V, IC=-1mA

Collector Output Capacitance

Noise Figure

Cob

VCB=-10V, IE=0, f=1MHz

4.0

1.0

7.0

VCE=-6V, IC=-0.1mA,f=1kHz, Rg=10KΩ

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