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KTA1504

更新时间: 2024-11-01 11:32:15
品牌 Logo 应用领域
金誉半导体 - HTSEMI 晶体晶体管
页数 文件大小 规格书
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描述
TRANSISTOR (PNP)

KTA1504 数据手册

  
KTA1504  
TRANSISTOR (PNP)  
SOT23  
FEATURES  
Complementary to KTC3875  
Low Noise  
Excellent hFE Linearity  
1. BASE  
2. EMITTER  
3. COLLECTOR  
MAXIMUM RATINGS (Ta=25unless otherwise noted)  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Value  
Unit  
V
Collector-Base Voltage  
-50  
V
Collector-Emitter Voltage  
Emitter-Base Voltage  
-50  
V
-5  
Collector Current  
-150  
150  
mA  
mW  
/W  
Collector Power Dissipation  
Thermal Resistance From Junction To Ambient  
Junction Temperature  
PC  
RΘJA  
Tj  
833  
150  
Storage Temperature  
Tstg  
-55+150  
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)  
Parameter  
Symbol  
Test  
conditions  
Min  
Typ  
Max  
Unit  
V(BR)CBO IC=-100µA, IE=0  
V(BR)CEO IC=-1mA, IB=0  
V(BR)EBO IE=-100µA, IC=0  
-50  
V
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
-50  
-5  
V
ICBO  
IEBO  
hFE  
VCB=-50V, IE=0  
-0.1  
-0.1  
400  
-0.3  
µA  
µA  
VEB=-5V, IC=0  
Emitter cut-off current  
VCE=-6V, IC=-2mA  
IC=-100mA, IB=-10mA  
VCE=-10V,IC=-1mA,  
VCB=-10V, IE=0, f=1MHz  
70  
80  
DC current gain  
VCE(sat)  
fT  
V
Collector-emitter saturation voltage  
Transition frequency  
MHz  
pF  
Cob  
7
Collector output capacitance  
CLASSIFICATION OF hFE  
RANK  
O
Y
GR  
200400  
ASG  
RANGE  
70140  
ASO  
120240  
MARKING  
ASY  
1
JinYu  
semiconductor  
www.htsemi.com  
Date:2011/05  

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