Datasheet > KTA1504

KTA1504

更新时间： 2024-11-21 11:32:15

品牌	Logo	应用领域
金誉半导体 - HTSEMI		晶体晶体管
页数	文件大小	规格书
1页	364K
描述
TRANSISTOR (PNP)

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中文翻译

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数据手册

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KTA1504 数据手册

KTA1504

TRANSISTOR (PNP)

SOT–23

FEATURES

 Complementary to KTC3875

 Low Noise

 Excellent h_FELinearity

1. BASE

2. EMITTER

3. COLLECTOR

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

Unit

Collector-Base Voltage

-50

Collector-Emitter Voltage

Emitter-Base Voltage

-50

-5

Collector Current

-150

150

℃/W

℃

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

P_C

R_ΘJA

T_j

833

150

Storage Temperature

T_stg

-55～+150

℃

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

V_(BR)CBOI_C=-100µA, I_E=0

V_(BR)CEOI_C=-1mA, I_B=0

V_(BR)EBOI_E=-100µA, I_C=0

-50

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

-50

-5

I_CBO

I_EBO

h_FE

V_CB=-50V, I_E=0

-0.1

400

-0.3

µA

V_EB=-5V, I_C=0

Emitter cut-off current

V_CE=-6V, I_C=-2mA

I_C=-100mA, I_B=-10mA

V_CE=-10V,I_C=-1mA,

V_CB=-10V, I_E=0, f=1MHz

DC current gain

V_CE(sat)

f_T

Collector-emitter saturation voltage

Transition frequency

MHz

C_ob

Collector output capacitance

CLASSIFICATION OF h_FE

RANK

200–400

ASG

RANGE

70–140

ASO

120–240

MARKING

ASY

JinYu

semiconductor

www.htsemi.com

Date:2011/05

中文翻译

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