SMD Type
Transistors
PNP Transistors
KTA1505 (KTA1505S)
SOT-23
Unit: mm
+0.1
-0.1
2.9
0.4
+0.1
-0.1
3
■ Features
● Excellent hFE Linearity
● Comlementary to KTC3876/KTC3876S
1
2
+0.1
-0.1
+0.05
-0.01
0.95
0.1
+0.1
-0.1
1.9
1.Base
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Base Current
Symbol
Rating
-35
Unit
V
VCBO
VCEO
VEBO
-30
-5
I
C
-500
-50
mA
mW
℃
I
B
P
C
150
150
Collector Power Dissipation
Junction Temperature
Tc = 25℃
T
J
Storage Temperature range
T
stg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
-35
-30
-5
Typ
Max
Unit
V
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
VCBO
VCEO
VEBO
Ic= -100 uA, I
Ic= -1 mA,I =0
= -100 uA, I
CB= -35V , I =0
EB= -5V , I =0
E=0
B
I
E
C=0
I
CBO
EBO
V
V
E
-0.1
-0.1
-0.25
-1.2
-1
uA
V
I
C
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base - emitter voltage
V
CE(sat)
BE(sat)
I
I
C
=-100mA, I
B
=-10mA
=-10mA
V
C
=-100mA, I
B
V
BE
V
V
CE= -1V, I
CE= -1V, I
C
= -100mA
= -100mA
C
70
25
40
400
DC current gain
hFE
O
Y
V
CE= -6V, I
C= -400mA
Collector output capacitance
Transition frequency
C
ob
T
V
V
CB= -6V, I
CE= -6V, I
E
= 0,f=1MHz
13
pF
f
C
= -20mA
200
MHz
■ Classification of hfe(1)
Type
Range
Marking
KTA1505-O
KTA1505-Y
120-240
AZY
KTA1505-G
200-400
AZG
70-140
AZO
1
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