Datasheet > KTA1505

KTA1505

更新时间： 2024-11-02 14:55:23

品牌	Logo	应用领域
鲁光 - LGE		双极型晶体管
页数	文件大小	规格书
2页	1105K
描述
双极型晶体管

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技术参数
数据手册

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KTA1505 技术参数

极性：	PNP	Collector-emitter breakdown voltage：	30
Collector Current - Continuous：	0.5	DC current gain - Min：	70
DC current gain - Max：	400	Transition frequency：	150
Package：	SOT-23	Storage Temperature Range：	-55-150
class：	Transistors

KTA1505 数据手册

KTA1505

PNP Silicon Epitaxial Planar Transistor

FEATURES

SOT-23

Min

Complementary To KTC3876.

Dim

Max

3.10

1.50

Excellent H_FELinearity.

Low noise.

2.70

1.10

1.0 Typical

0.4 Typical

APPLICATIONS

0.35

0.48

2.00

0.1

1.80

0.02

General purpose application, switching application.

0.1 Typical

ORDERING INFORMATION

2.20

2.60

All Dimensions in mm

Type No.

KTA1505

Marking

Package Code

SOT-23

AZO/AZY/AZG

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Symbol

Parameter

Value

Units

Collector-Base Voltage

V_CBO

-35

-30

-5

Collector-Emitter Voltage

Emitter-Base Voltage

V_CEO

V_EBO

I_C

Collector Current -Continuous

Collector Power Dissipation

-500

150

P_C

Junction and Storage Temperature

T_j,T_stg

-55 to +150

℃

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol Test conditions

MIN

TYP MAX UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBO

I_C=-100μA,I_E=0

-35

V_(BR)CEO

V_(BR)EBO

I_C=-1mA,I_B=0

-30

-5

I_E=-100μA,I_C=0

I_CBO

I_EBO

V_CB=-35V,I_E=0

V_EB=-5V,I_C=0

-0.1

μA

Emitter cut-off current

-0.1

400

V_CE=-1V,I_C=-100mA

V_CE=-6V,I_C=-400mA

DC current gain

h_FE

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

I_C=-100mA, I_B=-10mA

V_CE=-1V,I_C=-100mA

V_CE=-6V, I_C= -20mA

V_CB=-6V,I_E=0,f=1MHz

V_CE(sat)

V_BE

f_T

-0.1

-0.8

200

-0.25

-1.0

MHz

Collector output capacitance

C_ob

CLASSIFICATION OF h_FE

Rank

Range

Marking

70-140

AZO

120-240

AZY

200-400

AZG

http://www.lgesemi.com

mail:lge@lgesemi.com

Revision:20170701-P1

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