Datasheet > KTA1297GR

KTA1297GR

更新时间： 2024-11-20 20:57:47

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
1页	110K
描述
Transistor

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中文翻译

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技术参数
数据手册

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KTA1297GR 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Base Number Matches：	1

KTA1297GR 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-92S Plastic-Encapsulate Transistors

TO – 92S

KTA1297 TRANSISTOR (PNP)

1. EMITTER

2. COLLECTOR

3. BASE

FEATURES

General Purpose Switching Application

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Value

-20

Unit

Collector-Emitter Voltage

Emitter-Base Voltage

-20

-6

Collector Current

-2

P_C

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

400

℃/W

℃

R_θJA

T_j

312

150

T_stg

Storage Temperature

-55~+150

℃

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test

conditions

Min

-20

-6

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C= -0.1mA,I_E=0

I_C=-1mA,I_B=0

I_E=-0.1mA,I_C=0

V_CB=-20V,I_E=0

-0.1

400

μA

Emitter cut-off current

I_EBO

V_EB=-6V,I_C=0

h_FE(1)

h_FE(2)

V_CE(sat)

V_BE

V_CE=-2V, I_C=-0.1A

V_CE=-2V, I_C=-2A

I_C=-2A,I_B=-0.1A

V_CE=-2V, I_C=-0.1A

V_CB=-10V,I_E=0, f=1MHz

VCE=-2V,IC=-0.5A

120

DC current gain

Collector-emitter saturation voltage

Base-emitter voltage

-0.5

-0.85

Collector output capacitance

Transition frequency

C_ob

f_T

120

MHz

CLASSIFICATION OF h_FE(1)

RANK

RANGE

120-240

200-400

A,Dec,2010

中文翻译

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