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KTA1298Y-G PDF预览

KTA1298Y-G

更新时间: 2024-11-01 13:09:11
品牌 Logo 应用领域
WEITRON 晶体晶体管
页数 文件大小 规格书
4页 626K
描述
Transistor

KTA1298Y-G 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.61
Base Number Matches:1

KTA1298Y-G 数据手册

 浏览型号KTA1298Y-G的Datasheet PDF文件第2页浏览型号KTA1298Y-G的Datasheet PDF文件第3页浏览型号KTA1298Y-G的Datasheet PDF文件第4页 
KTA1298  
COLLECTOR  
PNP Silicon Transistors  
3
1
BASE  
2
SOT-23  
EMITTER  
(Ta=25 C)  
MAXIMUM RATINGS  
Rating  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Symbol  
Value  
-30  
-35  
-5.0  
-800  
Unit  
Vdc  
Vdc  
Vdc  
mAdc  
V
CEO  
V
CBO  
V
EBO  
Collector Current -Continuous  
I
C
THERMAL CHARACTERISTICS  
Characteristics  
Total Device Dissipation FR-5 Board  
Symbol  
Value  
Unit  
mW  
(1)  
P
200  
D
T =25 C  
A
mW/ C  
C/W  
C
Derate above 25 C  
Thermal Resistance, Junction Ambient  
1.6  
625  
R
θJA  
-55 to +150  
T
Junction and Storage, Temperature  
Tstg  
J,  
Device Marking  
KTA1298=IO, IY  
ELECTRICAL CHARACTERISTICS  
Characteristics  
Symbol  
Min  
Max  
Unit  
-
Collector-Emitter Breakdown Voltage (I = -10 mAdc, I =0)  
V
-30  
Vdc  
C
B
(BR)CEO  
-
-
-35  
Vdc  
Vdc  
Collector-Base Breakdown Voltage (I = -1 uAdc, I =0)  
V
V
C
E
(BR)CBO  
-5.0  
Emitter-Base Breakdown Voltage (I = -1 uAdc, I =0)  
(BR)EBO  
E
C
-
-
I
uAdc  
uAdc  
-1.0  
-1.0  
Collector Cutoff Current (V = -30Vdc, I =0)  
CBO  
CB  
E
I
Emitter Cutoff Current (V = -5.0 V c, I =0)  
EBO  
d
EB  
C
1. FR-5=1.0 0.75 0.062 in  
WEITRON  
http://www.weitron.com.tw  

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