Datasheet > KTA1298-3_15

KTA1298-3_15

更新时间： 2024-11-02 01:11:47

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
2页	812K
描述
PNP Transistors

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中文翻译

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数据手册

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KTA1298-3_15 数据手册

SMD Type

Transistors

PNP Transistors

KTA1298

SOT-23-3

Unit: mm

+0.2

-0.1

2.9

0.4

+0.1

-0.1

■ Features

● Collector Power Dissipation: PC=200mW

● Collector Current: I^C=-800mA

+0.02

-0.02

+0.1

-0.1

0.15

0.95

+0.1

-0.2

1.9

1. Base

2. Emitter

3. Collector

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Symbol

V^CEO

V^CBO

V^EBO

I^C

Rating

-35

Unit

-30

-5

Collector Current

-800

200

℃

Collector Power Dissipation

Junction Temperature

P^C

T^j

150

Storage Temperature Range

T^stg

-55 to 150

℃

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test conditions

Min

-35

-30

-5

Typ Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector Cut-off Current

V^(BR)CBOIC=-1mA,IE=0

V^(BR)CEOIC=-10mA,IB=0

V^(BR)EBOIE=-1mA,IC=0

I^CBO

I^EBO

VCB=-30V, IE=0

-0.1

320

Emitter Cut-off Current

VEB=-5V, IC=0

V^CE=-1V, IC=-100mA

V^CE=-1V, IC=-800mA

100

DC Current Gain

h^FE

Collector-Emitter Saturation Voltage

Transition Frequency

V^CE(sat)IC=-500mA, IB=-20mA

-0.4

f^T

VCE=-5V, IC=-10mA

120

MHz

Collector Output Capacitance

C^ob

VCB=-10V, IE=0, f=1MHz

■ hFE Classification

Type

Range

Marking

KTA1298-O

100-200

KIO

KTA1298-Y

160-320

KIY

www.kexin.com.cn

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