5秒后页面跳转
KTA1381 PDF预览

KTA1381

更新时间: 2024-10-31 22:38:43
品牌 Logo 应用领域
KEC 晶体显示器晶体管输出元件放大器局域网
页数 文件大小 规格书
3页 401K
描述
EPITAXIAL PLANAR PNP TRANSISTOR (HIGH-DIFFINITION CRT DISPLAY VIDEO OUTPUT)

KTA1381 技术参数

生命周期:Active零件包装代码:SIP
包装说明:TO-126, 3 PIN针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.75风险等级:5.74
Is Samacsys:N最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:300 V配置:SINGLE
最小直流电流增益 (hFE):60JEDEC-95代码:TO-126
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:PNP表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):150 MHzBase Number Matches:1

KTA1381 数据手册

 浏览型号KTA1381的Datasheet PDF文件第2页浏览型号KTA1381的Datasheet PDF文件第3页 
SEMICONDUCTOR  
KTA1381  
EPITAXIAL PLANAR PNP TRANSISTOR  
TECHNICAL DATA  
HIGH-DEFINITION CRT DISPLAY,  
A
B
VIDEO OUTPUT APPLICATIONS.  
D
C
E
FEATURES  
F
High breakdown voltage : VCEO 300V.  
Small reverse transfer capacitance and  
excellent high frequency characteristic.  
: Cre=2.3pF (VCB=30V, f=1MHz)  
Complementary KTC3503.  
G
H
DIM MILLIMETERS  
J
A
B
C
D
E
8.3 MAX  
K
5.8  
L
0.7  
_
+
Φ3.2 0.1  
3.5  
_
+
F
11.0 0.3  
G
H
J
2.9 MAX  
1.0 MAX  
1.9 MAX  
M
MAXIMUM RATING (Ta=25  
CHARACTERISTIC  
)
O
_
+
0.75 0.15  
K
L
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
RATING  
-300  
-300  
-5  
UNIT  
V
N
P
_
+
15.50 0.5  
1
2
3
_
+
2.3 0.1  
M
N
O
P
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
_
+
0.65 0.15  
1.6  
1. EMITTER  
2. COLLECTOR  
3. BASE  
V
3.4 MAX  
V
DC  
Collector Current  
Pulse  
-100  
-200  
1.5  
mA  
W
TO-126  
ICP  
Ta=25  
Tc=25  
Collector Power  
Dissipation  
PC  
7
Tj  
Junction Temperature  
150  
Tstg  
Storage Temperature Range  
-55 150  
ELECTRICAL CHARACTERISTICS (Ta=25  
)
CHARACTERISTIC  
Collector Cut-off Current  
SYMBOL  
ICBO  
TEST CONDITION  
VCB=-200V, IE=0  
MIN.  
TYP.  
MAX.  
UNIT  
A
-
-
-0.1  
IEBO  
VEB=-4V, IC=0  
Emitter Cut-off Current  
-
-
-0.1  
A
hFE (Note)  
fT  
VCE=-10V, IC=-10mA  
VCE=-30V, IC=-10mA  
VCB=-30V, IE=0, f=1MHz  
VCB=-30V, IE=0, f=1MHz  
IC=-20mA, IB=-2mA  
IC=-20mA, IB=-2mA  
IC=-10 A, IE=0  
DC Current Gain  
60  
-
150  
3.1  
2.3  
-
200  
Transition Frequency  
-
-
MHz  
pF  
pF  
V
Cob  
Collector Output Capacitance  
Reverse Transfer Capacitance  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Base-Emitter Breakdown Voltage  
-
-
Cre  
-
-
-
VCE(sat)  
VBE(sat)  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
-0.6  
-
-
-1.0  
V
-300  
-300  
-5  
-
-
-
-
V
IC=-1mA, IB=0  
-
V
IE=-10 A, IC=0  
-
V
Note : hFE Classification O:60 120, Y:100 200  
2003. 7. 24  
Revision No : 3  
1/3  

与KTA1381相关器件

型号 品牌 获取价格 描述 数据表
KTA1385D KEC

获取价格

EPITAXIAL PLANAR PNP TRANSISTOR (LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT)
KTA1385L KEC

获取价格

EPITAXIAL PLANAR PNP TRANSISTOR (LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT)
KTA143ZKA TYSEMI

获取价格

Unit: mm
KTA143ZKA KEXIN

获取价格

PNP Digital Transistors
KTA1504 WEITRON

获取价格

PNP General Purpose Transistors
KTA1504 HTSEMI

获取价格

TRANSISTOR (PNP)
KTA1504 SECOS

获取价格

-0.15A , -50V PNP Plastic Encapsulated Transistor
KTA1504 KEC

获取价格

EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, SWITCHING)
KTA1504 BL Galaxy Electrical

获取价格

PNP Silicon Epitaxial Planar Transistor
KTA1504 KEXIN

获取价格

PNP Transistors