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KTA1381

更新时间: 2024-11-19 22:38:43
品牌 Logo 应用领域
KEC 晶体显示器晶体管输出元件放大器局域网
页数 文件大小 规格书
3页 401K
描述
EPITAXIAL PLANAR PNP TRANSISTOR (HIGH-DIFFINITION CRT DISPLAY VIDEO OUTPUT)

KTA1381 技术参数

生命周期:Active零件包装代码:SIP
包装说明:TO-126, 3 PIN针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.75风险等级:5.74
Is Samacsys:N最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:300 V配置:SINGLE
最小直流电流增益 (hFE):60JEDEC-95代码:TO-126
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:PNP表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):150 MHzBase Number Matches:1

KTA1381 数据手册

 浏览型号KTA1381的Datasheet PDF文件第2页浏览型号KTA1381的Datasheet PDF文件第3页 
SEMICONDUCTOR  
KTA1381  
EPITAXIAL PLANAR PNP TRANSISTOR  
TECHNICAL DATA  
HIGH-DEFINITION CRT DISPLAY,  
A
B
VIDEO OUTPUT APPLICATIONS.  
D
C
E
FEATURES  
F
High breakdown voltage : VCEO 300V.  
Small reverse transfer capacitance and  
excellent high frequency characteristic.  
: Cre=2.3pF (VCB=30V, f=1MHz)  
Complementary KTC3503.  
G
H
DIM MILLIMETERS  
J
A
B
C
D
E
8.3 MAX  
K
5.8  
L
0.7  
_
+
Φ3.2 0.1  
3.5  
_
+
F
11.0 0.3  
G
H
J
2.9 MAX  
1.0 MAX  
1.9 MAX  
M
MAXIMUM RATING (Ta=25  
CHARACTERISTIC  
)
O
_
+
0.75 0.15  
K
L
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
RATING  
-300  
-300  
-5  
UNIT  
V
N
P
_
+
15.50 0.5  
1
2
3
_
+
2.3 0.1  
M
N
O
P
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
_
+
0.65 0.15  
1.6  
1. EMITTER  
2. COLLECTOR  
3. BASE  
V
3.4 MAX  
V
DC  
Collector Current  
Pulse  
-100  
-200  
1.5  
mA  
W
TO-126  
ICP  
Ta=25  
Tc=25  
Collector Power  
Dissipation  
PC  
7
Tj  
Junction Temperature  
150  
Tstg  
Storage Temperature Range  
-55 150  
ELECTRICAL CHARACTERISTICS (Ta=25  
)
CHARACTERISTIC  
Collector Cut-off Current  
SYMBOL  
ICBO  
TEST CONDITION  
VCB=-200V, IE=0  
MIN.  
TYP.  
MAX.  
UNIT  
A
-
-
-0.1  
IEBO  
VEB=-4V, IC=0  
Emitter Cut-off Current  
-
-
-0.1  
A
hFE (Note)  
fT  
VCE=-10V, IC=-10mA  
VCE=-30V, IC=-10mA  
VCB=-30V, IE=0, f=1MHz  
VCB=-30V, IE=0, f=1MHz  
IC=-20mA, IB=-2mA  
IC=-20mA, IB=-2mA  
IC=-10 A, IE=0  
DC Current Gain  
60  
-
150  
3.1  
2.3  
-
200  
Transition Frequency  
-
-
MHz  
pF  
pF  
V
Cob  
Collector Output Capacitance  
Reverse Transfer Capacitance  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Base-Emitter Breakdown Voltage  
-
-
Cre  
-
-
-
VCE(sat)  
VBE(sat)  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
-0.6  
-
-
-1.0  
V
-300  
-300  
-5  
-
-
-
-
V
IC=-1mA, IB=0  
-
V
IE=-10 A, IC=0  
-
V
Note : hFE Classification O:60 120, Y:100 200  
2003. 7. 24  
Revision No : 3  
1/3  

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