KTA1298

更新时间： 2024-01-06 16:05:02

品牌	Logo	应用领域
WEITRON		晶体晶体管
页数	文件大小	规格书
4页	626K
描述
PNP Silicon Transistors

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中文翻译

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数据手册

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KTA1298 数据手册

KTA1298

COLLECTOR

PNP Silicon Transistors

BASE

SOT-23

EMITTER

(Ta=25 C)

MAXIMUM RATINGS

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Symbol

Value

-30

-35

-5.0

-800

Unit

Vdc

mAdc

CEO

CBO

EBO

Collector Current -Continuous

THERMAL CHARACTERISTICS

Characteristics

Total Device Dissipation FR-5 Board

Symbol

Value

Unit

(1)

200

T =25 C

mW/ C

C/W

Derate above 25 C

Thermal Resistance, Junction Ambient

1.6

625

θJA

-55 to +150

Junction and Storage, Temperature

Tstg

Device Marking

KTA1298=IO, IY

ELECTRICAL CHARACTERISTICS

Characteristics

Symbol

Min

Max

Unit

Collector-Emitter Breakdown Voltage (I = -10 mAdc, I =0)

-30

Vdc

(BR)CEO

-35

Vdc

Collector-Base Breakdown Voltage (I = -1 uAdc, I =0)

(BR)CBO

-5.0

Emitter-Base Breakdown Voltage (I = -1 uAdc, I =0)

(BR)EBO

uAdc

-1.0

Collector Cutoff Current (V = -30Vdc, I =0)

CBO

Emitter Cutoff Current (V = -5.0 V c, I =0)

EBO

1. FR-5=1.0 0.75 0.062 in

WEITRON

http://www.weitron.com.tw

12 3 4

中文翻译

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