DIP Type
Transistors
PNP Transistors
KTA1281
TO-92L
Unit:mm
4.9 ± 0.2
0.7 ±0.1
■ Features
0.45 ±0.1
● Low Collector Saturation Voltage
● High Speed Switching Time
● Comlementary to KTC3209
2
1
3
1.27
2.54 ±0.1
1.60 (max)
Emitter
1.
2.Collector
3.Base
4.0(min)
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Symbol
Rating
-50
-50
-5
Unit
V
VCBO
VCEO
VEBO
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
I
C
-2
A
P
C
1
W
T
J
150
℃
Storage Temperature range
T
stg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
V
V
V
CBO
CEO
EBO
-50
-50
-5
Ic= -100 uA, I
Ic= -10 mA,I =0
= -100 uA, I =0
CB= -50V , I =0
EB= -5V , I =0
E=0
V
B
I
E
C
I
CBO
EBO
V
V
E
-0.1
-0.1
-0.5
-1.2
240
uA
V
I
C
Collector-emitter saturation voltage
Base - emitter saturation voltage
V
CE(sat)
BE(sat)
I
I
C
=-1 A, I
B
=-50mA
=-50mA
V
C=-1 A, I
B
hFE(1)
V
V
CE= -2V, I
CE= -2V, I
C
= -500mA
= -1.5 A
70
40
DC current gain
hFE(2)
C
Turn On Time
Storage Time
Fall Time
t
on
0.1
1
us
t
stg
t
f
0.1
Collector output capacitance
Transition frequency
C
ob
T
V
V
CB= -10V, I
E
= 0,f=1MHz
40
pF
f
CE= -2V, I = -500mA
C
100
MHz
■ Classification of hfe(1)
Type
KTA1281-O
KTA1281-Y
120-240
Range
70-140
1
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