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KTA1281 PDF预览

KTA1281

更新时间: 2023-12-06 20:08:49
品牌 Logo 应用领域
鲁光 - LGE 双极型晶体管
页数 文件大小 规格书
3页 724K
描述
双极型晶体管

KTA1281 技术参数

极性:PNPCollector-emitter breakdown voltage:50
Collector Current - Continuous:2DC current gain - Min:70
DC current gain - Max:240Transition frequency:100
Package:TO-92LStorage Temperature Range:-55-150
class:Transistors

KTA1281 数据手册

 浏览型号KTA1281的Datasheet PDF文件第2页浏览型号KTA1281的Datasheet PDF文件第3页 
KTA1281  
TO-92MOD Transistor (PNP)  
1. EMITTER  
2. COLLECTOR  
3. BASE  
1
2
3
TO-92MOD  
5.800  
6.200  
8.400  
8.800  
Features  
0.900  
1.100  
0.400  
0.600  
—
—
—
Low Collector Saturation Voltage: VCE(sat)=-0.5V(Max.)(IC=-1A)  
High Speed Switching time: tstg=1.0 μS(Typ.).  
Complementary to KTC3209.  
13.800  
14.200  
MAXIMUM RATINGS (TA=25unless otherwise noted)  
1.500 TYP  
2.900  
3.100  
Symbol  
Parameter  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Value  
Units  
V
0.000  
0.380  
1.600  
VCBO  
VCEO  
VEBO  
IC  
-50  
0.400  
0.500  
4.700  
5.100  
-50  
V
-5  
V
1.730  
2.030  
Collector Current -Continuous  
Collector Power Dissipation  
Junction Temperature  
-2  
A
4.000  
Dimensions in inches and (millimeters)  
PC  
1
W
TJ  
150  
-55-150  
Storage Temperature  
Tstg  
ELECTRICAL CHARACTERISTICS (Tamb=25  
unless otherwise specified)  
Parameter  
Symbol  
Test  
conditions  
MIN  
-50  
-50  
-5  
TYP  
MAX  
UNIT  
V
V(BR)CBO IC= -100 uA, IE=0  
V(BR)CEO IC= -10mA, IB=0  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
V
V(BR)EBO  
ICBO  
V
IE= -100μA, IC=0  
VCB= -50 V , IE=0  
VEB= -5V , IC=0  
-0.1  
-0.1  
240  
μA  
μA  
Emitter cut-off current  
IEBO  
hFE(1)  
hFE(2)  
VCE= -2V, IC= -0.5A  
VCE= -2V, IC= -1.5A  
70  
40  
DC current gain  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
Transition frequency  
Out capacitance  
VCE(sat) IC=-1A, IB= -0.05A  
VBE(sat) IC=-1A, IB= -0.05A  
-0.5  
-1.2  
V
V
fT  
Cob  
ton  
ts  
VCE=-2V, IC=-0.5A  
100  
40  
MHz  
pF  
us  
VCB= -10 V , IE=0 , f=1MHZ  
Turn-on time  
0.1  
1
VCC=-30V,IB1=-IB2=-0.05A,  
IC=-1A  
Storage time  
us  
Fall time  
tf  
0.1  
us  
CLASSIFICATION OF hFE(1)  
Rank  
O
Y
Range  
70-140  
120 - 240  
http://www.lgesemi.com  
Revision:20170701-P1  
mail:lge@lgesemi.com  

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