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KTA1275_07 PDF预览

KTA1275_07

更新时间: 2024-11-18 11:32:15
品牌 Logo 应用领域
KEC 晶体晶体管局域网
页数 文件大小 规格书
3页 773K
描述
EPITAXIAL PLANAR PNP TRANSISTOR

KTA1275_07 数据手册

 浏览型号KTA1275_07的Datasheet PDF文件第2页浏览型号KTA1275_07的Datasheet PDF文件第3页 
SEMICONDUCTOR  
KTA1275  
EPITAXIAL PLANAR PNP TRANSISTOR  
TECHNICAL DATA  
COLOR TV VERT. DEFELECTION OUTPUT APPLICATION.  
COLOR TV CLASS B SOUND OUTPUT APPLICATION.  
B
D
FEATURES  
High Voltage : VCEO=-160V.  
Large Continuous Collector Current Capability.  
Complementary to KTC3228.  
DIM MILLIMETERS  
P
DEPTH:0.2  
A
B
C
D
7.20 MAX  
5.20 MAX  
0.60 MAX  
C
Q
S
2.50 MAX  
E
F
1.15 MAX  
1.27  
K
G
H
J
1.70 MAX  
0.55 MAX  
F
F
_
MAXIMUM RATING (Ta=25  
CHARACTERISTIC  
)
14.00+0.50  
K
L
M
0.35 MIN  
H
H
H
_
0.75+0.10  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
RATING  
-160  
-160  
-6  
UNIT  
V
E
4
25  
M
M
N
O
P
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
1.25  
L
1
2
3
H
Φ1.50  
0.10 MAX  
V
Q
R
S
N
N
_
12.50+0.50  
V
1. EMITTER  
2. COLLECTOR  
3. BASE  
1.00  
-1  
A
IB  
Base Current  
-0.5  
A
PC  
Collector Power Dissipation  
Junction Temperature  
Storage Temperature Range  
1
W
TO-92L  
Tj  
150  
Tstg  
-55 150  
ELECTRICAL CHARACTERISTICS (Ta=25  
)
CHARACTERISTIC  
Collector Cut-off Current  
SYMBOL  
ICBO  
TEST CONDITION  
MIN.  
TYP.  
MAX.  
-1.0  
-1.0  
-
UNIT  
VCB=-150V, IE=0  
-
-
-
A
A
IEBO  
VEB=-6V, IC=0  
Emitter Cut-off Current  
-
-160  
60  
-
V(BR)CEO  
hFE (Note)  
VCE(sat)  
VBE(sat)  
VBE  
IC=-10mA, IB=0  
Collector-Emitter Breakdown Voltage  
DC Current Gain  
-
V
VCE=-5V, IC=-200mA  
IC=-500mA, IB=-50mA  
IC=-500mA, IB=-50mA  
VCE=-5V, IC=-5mA  
VCE=-5V, IC=-200mA  
VCB=-10V, IE=0, f=1MHz  
-
320  
-1.5  
-1.2  
-0.75  
-
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Base-Emitter Voltage  
-
V
V
-
-
-0.45  
15  
-
-
V
fT  
Transition Frequency  
50  
-
MHz  
pF  
Cob  
Collector Output Capacitance  
35  
Note : hFE Classification R:60 120  
0:100 200, Y:160 320  
2007. 12. 20  
Revision No : 3  
1/3  

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