KSE340STSTU

更新时间： 2024-11-02 13:09:11

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管功率双极晶体管局域网
页数	文件大小	规格书
4页	40K
描述
暂无描述

阅读下载

中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

KSE340STSTU 数据手册

KSE340

High Voltage General Purpose Applications

•

High Collector-Emitter Breakdown Voltage

Suitable for Transformer

Complement to KSE350

TO-126

1. Emitter 2.Collector 3.Base

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings ^{T =25°C unless otherwise noted}

Symbol

Parameter

Value

300

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

CBO

CEO

EBO

300

500

°C

Collector Dissipation (T =25°C)

Junction Temperature

Storage Temperature

150

- 65 ~ 150

STG

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Collector-Emitter Breakdown Voltage

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

Test Condition

Min.

Max. Units

= 1mA, I = 0

300

CEO

CBO

EBO

= 300V, I =0

100

240

µA

= 3V, I = 0

= 10V, I = 50mA

Rev. A1, December 2000

12 3 4

中文翻译

下载PDF

KSE340STSTU 替代型号

型号	品牌	替代类型	描述	数据表
MJE340STU	FAIRCHILD	完全替代	Power Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plast

与KSE340STSTU相关器件

型号	品牌	获取价格	描述	数据表
KSE340STU	FAIRCHILD	获取价格	Power Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plast
KSE340STU	ONSEMI	获取价格	NPN外延硅晶体管
KSE340STU	ROCHESTER	获取价格	0.5A, 300V, NPN, Si, POWER TRANSISTOR, TO-126, LEAD FREE, TO-126, 3 PIN
KSE340STU_NL	FAIRCHILD	获取价格	Power Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plast
KSE350	FAIRCHILD	获取价格	High Voltage General Purpose Applications
KSE350	FOSHAN	获取价格	TO-126F
KSE350S	FAIRCHILD	获取价格	High Voltage General Purpose Applications
KSE350STU	DIODES	获取价格	High Voltage General Purpose Applications
KSE350STU	ONSEMI	获取价格	PNP 外延硅晶体管
KSE44H	FAIRCHILD	获取价格	General Purpose Power Switching Applications