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KSE340STU PDF预览

KSE340STU

更新时间: 2024-09-26 19:45:35
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 局域网晶体管
页数 文件大小 规格书
4页 36K
描述
Power Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, LEAD FREE, TO-126, 3 PIN

KSE340STU 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-126
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.38
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:300 V
配置:SINGLE最小直流电流增益 (hFE):30
JEDEC-95代码:TO-126JESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):20 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
Base Number Matches:1

KSE340STU 数据手册

 浏览型号KSE340STU的Datasheet PDF文件第2页浏览型号KSE340STU的Datasheet PDF文件第3页浏览型号KSE340STU的Datasheet PDF文件第4页 
KSE340  
High Voltage General Purpose Applications  
High Collector-Emitter Breakdown Voltage  
Suitable for Transformer  
Complement to KSE350  
TO-126  
1. Emitter 2.Collector 3.Base  
1
NPN Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
300  
Units  
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
V
V
CBO  
CEO  
EBO  
300  
V
5
V
I
500  
mA  
W
°C  
°C  
C
P
Collector Dissipation (T =25°C)  
20  
C
C
T
Junction Temperature  
Storage Temperature  
150  
J
T
- 65 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Collector-Emitter Breakdown Voltage  
Collector Cut-off Current  
Emitter Cut-off Current  
DC Current Gain  
Test Condition  
Min.  
Max. Units  
BV  
I
= 1mA, I = 0  
300  
V
CEO  
CBO  
EBO  
C
B
I
I
V
V
V
= 300V, I =0  
100  
100  
240  
µA  
µA  
CB  
BE  
CE  
E
= 3V, I = 0  
C
h
= 10V, I = 50mA  
30  
FE  
C
©2000 Fairchild Semiconductor International  
Rev. A1, December 2000  

KSE340STU 替代型号

型号 品牌 替代类型 描述 数据表
MJE340STU FAIRCHILD

完全替代

Power Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plast
BD158STU FAIRCHILD

类似代替

Power Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plast
MJE340G ONSEMI

功能相似

Plastic Medium−Power NPN Silicon Transistor

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