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KSE45H2 PDF预览

KSE45H2

更新时间: 2024-11-17 22:47:31
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关
页数 文件大小 规格书
4页 43K
描述
General Purpose Power Switching Applications

KSE45H2 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SFM包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.29.00.75
风险等级:5.78最大集电极电流 (IC):10 A
集电极-发射极最大电压:30 V配置:SINGLE
最小直流电流增益 (hFE):60JEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
最大功率耗散 (Abs):50 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):40 MHzBase Number Matches:1

KSE45H2 数据手册

 浏览型号KSE45H2的Datasheet PDF文件第2页浏览型号KSE45H2的Datasheet PDF文件第3页浏览型号KSE45H2的Datasheet PDF文件第4页 
KSE45H Series  
General Purpose Power Switching Applications  
Low Collector-Emitter Saturation Voltage: V (sat) = -1V (MAX)@-8A  
Fast Switching Speeds  
Complement to KSE44H  
CE  
TO-220  
1.Base 2.Collector 3.Emitter  
1
PNP Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
Units  
V
Collector-Emitter Voltage  
: KSE45H 1,2  
- 30  
- 45  
- 60  
- 80  
V
V
V
V
CEO  
: KSE45H 4,5  
: KSE45H 7,8  
: KSE45H 10,11  
V
Emitter- Base Voltage  
Collector Current (DC)  
*Collector Current (Pulse)  
- 5  
- 10  
V
A
EBO  
I
I
C
- 20  
A
CP  
P
P
Collector Dissipation (T =25°C)  
50  
W
W
°C  
°C  
C
C
Collector Dissipation (T =25°C)  
1.67  
C
a
T
T
Junction Temperature  
Storage Temperature  
150  
J
- 55 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Collector Cut-off Current  
Emitter Cut-off Current  
*DC Current Gain  
Test Condition  
Min.  
Typ.  
Max.  
-10  
Units  
µA  
I
I
V
V
= Rated, V , V = 0  
CES  
EBO  
CE  
EB  
CEO  
EB  
= - 5V, I = 0  
-100  
µA  
C
h
FE  
: KSE45H 1, 4, 7 10  
: KSE45H 2, 5, 8,11  
V
= - 1V, I = - 2A  
35  
60  
CE  
C
V
V
(sat)  
(sat)  
*Collector-Emitter Saturation Voltage  
: KSE45H 1, 4, 7 10  
CE  
I
I
= - 8A, I = - 0.8A  
-1  
-1  
V
V
C
C
B
: KSE45H 2, 5, 8,11  
= - 8A, I = - 0.4A  
B
*Base-Emitter Saturation Voltage  
Current Gain Bandwidth Product  
Output Capacitance  
Turn ON Time  
I
= - 8A, I = - 0.8A  
-1.5  
V
MHz  
pF  
BE  
ob  
C
B
f
V
V
V
= - 10V, I = - 0.5A  
40  
230  
135  
500  
100  
T
CE  
CB  
CC  
C
C
= - 10V, f = 1MHz  
t
t
t
=20V, I = - 5A  
ns  
ON  
C
I
= - I = - 0.5A  
B2  
Storage Time  
B1  
ns  
STG  
F
Fall Time  
ns  
* Pulse test: PW300µs, Duty cycle2%  
©2001 Fairchild Semiconductor Corporation  
Rev. A1, June 2001  

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