是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | SFM | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.75 |
风险等级: | 5.78 | 最大集电极电流 (IC): | 10 A |
集电极-发射极最大电压: | 30 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 60 | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | PNP |
最大功率耗散 (Abs): | 50 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 40 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
KSE45H4 | FAIRCHILD |
获取价格 |
General Purpose Power Switching Applications | |
KSE45H5 | FAIRCHILD |
获取价格 |
General Purpose Power Switching Applications | |
KSE45H5 | SAMSUNG |
获取价格 |
Power Bipolar Transistor, 10A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast | |
KSE45H5J69Z | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 10A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast | |
KSE45H7 | FAIRCHILD |
获取价格 |
General Purpose Power Switching Applications | |
KSE45H7J69Z | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast | |
KSE45H8 | FAIRCHILD |
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General Purpose Power Switching Applications | |
KSE45H8 | SAMSUNG |
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Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast | |
KSE45H8J69Z | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast | |
KSE45H8TU | FAIRCHILD |
获取价格 |
PNP Epitaxial Silicon Transistor, 3LD, TO220, JEDEC, MOLDED, 1000/RAIL |