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KSE5741J69Z PDF预览

KSE5741J69Z

更新时间: 2024-11-14 20:06:31
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 局域网开关晶体管
页数 文件大小 规格书
5页 47K
描述
Power Bipolar Transistor, 8A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN

KSE5741J69Z 技术参数

生命周期:Obsolete零件包装代码:SFM
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:unknown风险等级:5.84
最大集电极电流 (IC):8 A集电极-发射极最大电压:350 V
配置:DARLINGTON最小直流电流增益 (hFE):200
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

KSE5741J69Z 数据手册

 浏览型号KSE5741J69Z的Datasheet PDF文件第2页浏览型号KSE5741J69Z的Datasheet PDF文件第3页浏览型号KSE5741J69Z的Datasheet PDF文件第4页浏览型号KSE5741J69Z的Datasheet PDF文件第5页 
KSE5740/5741/5742  
High Voltage Power Switching In Inductive  
Circuits  
High Voltage Power Darlington TR  
Small Engine lgnition  
Switching Regulators  
Inverters  
Solenold and Relay Drivers  
Motor Control  
TO-220  
1.Base 2.Collector 3.Emitter  
1
NPN Silicon Darlington Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
Units  
BV (sus)  
Collector-Emitter Sustaining Voltage  
: KSE5740  
CEO  
300  
350  
400  
V
V
V
: KSE5741  
: KSE5742  
V
Collector-Emitter Voltage : KSE5740  
: KSE5741  
600  
700  
800  
V
V
V
CEV  
: KSE5742  
V
Emitter-Base Voltage  
Collector Current (DC)  
*Collector Current (Pulse)  
Base Current (DC)  
8
V
A
EBO  
I
8
C
I
I
I
16  
A
CP  
B
2.5  
A
*Base Current (Pulse)  
Collector Dissipation  
Junction Temperature  
Storage Temperature  
5
80  
A
BP  
P
W
°C  
°C  
C
J
T
T
150  
- 65 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Condition  
Min. Typ. Max. Units  
V
(sus)  
Collector-Emitter Sustaining Voltage  
: KSE5740  
CEO  
I
= 50mA, I =0  
300  
350  
400  
V
V
V
C
B
: KSE5741  
: KSE5742  
I
I
Collector Cut-off Current  
Emitter Cut-off Current  
DC Current Gain  
V
V
=Rate Value, V =1.5V  
BE(OFF)  
1
mA  
mA  
CEV  
EBO  
CEV  
= 8V, I = 0  
75  
EB  
C
h
V
V
=5V, I = 0.5A  
50  
200  
100  
400  
FE  
CE  
CE  
C
=5V, I = 4A  
C
V
V
V
(sat)  
(sat)  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
I
I
=4A, I = 0.2A  
2
3
V
V
CE  
BE  
F
C
C
B
=8A, I = 0.4A  
B
I
I
=4A, I = 0.2A  
2.5  
3.5  
V
V
C
C
B
=8A, I = 0.4A  
B
Diode Forward Voltage  
Delay Time  
I =5A  
2.5  
V
F
t
t
t
t
t
t
V
= 250V, I (pk) = 6A  
0.04  
0.5  
8
µs  
µs  
µs  
µs  
µs  
µs  
D
CC  
C
I
= I = 0.25A  
Rise Time  
B1  
B2  
R
t = 25µs  
P
Storage Time  
S
Duty Cycle1%  
Fall Time  
2
F
Voltage Storage Time  
I (pk) = 6A, V (pk) = 250V  
4
SV  
C
CE  
I 1= 0.06A, V (off) = 5V  
Cross-over Time  
B
BE  
2
C
* PW=5ms, Duty Cycle=10%  
©2001 Fairchild Semiconductor Corporation  
Rev. A1, June 2001  

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