KSE801STU

更新时间： 2024-11-12 13:09:11

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管达林顿晶体管
页数	文件大小	规格书
3页	75K
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中文翻译

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数据手册
替代型号

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KSE801STU 数据手册

NPN EPITAXIAL

KSE800/801/803

SILICON DARLINGTON TRANSISTOR

HIGH DC CURRENT GAIN

MIN h_FE= 750 @I_C= 1.5 and 2.0A DC

MONOLITHIC CONSTRUCTION WITH

TO-126

BUILT-IN BASE-EMITTER RESISTORS

· Complement to KSE700/701/702/703

ABSOLUTE MAXIMUM RATINGS

Characteristic

Collector- Base Voltage

: KSE800/801

Symbol

Rating

Unit

V_CBO

: KSE802/803

Collector-Emitter Voltage

: KSE800/801

V_CEO

: KSE802/803

Emitter- Base Voltage

Collector Current

V_EBO

I_C

1. Emitter 2. Collector 3. Base

Base Current

I_B

0.1

P_C

°C

Collector Dissipation (T_C=25°C)

Junction Temperature

Storage Temperature

T_J

150

T_STG

-55 ~ 150

ELECTRICAL CHARACTERISTICS(T_C=25°C)

Characteristic

Collector Emitter Breakdown Voltage

: KSE800/801

Symbol

BV_CEO

Test Condition

I_C= 50mA, I_B= 0

Min

Max

Unit

: KSE802/803

Collector Cutoff Current

: KSE800/801

: KSE802/803

Collector Cutoff Current

I_CEO

V_CE= 60V, I_B= 0

V_CE= 80V, I_B= 0

V_CB= Rated BV_CEO, I_E= 0

T_C= 100°C

100

500

I_CBO

Emitter Cutoff Current

DC Current Gain

I_EBO

h_FE

V_BE= 5V, I_C= 0

: KSE800/802

750

100

V_CE= 3V, I_C= 1.5A

V_CE= 3V, I_C= 2A

V_CE= 3V, I_C= 4A

: KSE801/803

: ALL DEVICES

Collector-Emitter Saturation Voltage

: KSE800/802

: KSE801/803

: ALL DEVICES

Base-Emitter On Voltage

: KSE800/802

V_CE(sat)

V_BE(on)

2.5

2.8

I_C= 1.5A, I_B= 30mA

I_C= 2A, I_B= 40mA

I_C= 4A, I_B= 40mA

1.2

2.5

V_CE= 3V, I_C= 1.5A

V_CE= 3V, I_C= 2A

V_CE= 3V, I_C= 4A

: KSE801/803

: ALL DEVICES

Rev. B

1999 Fairchild Semiconductor Corporation

12 3

中文翻译

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KSE801STU 替代型号

型号	品牌	替代类型	描述	数据表
BD677ASTU	FAIRCHILD	类似代替	Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/

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