Datasheet > KSE8355T

KSE8355T

更新时间： 2024-11-02 22:47:31

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		开关
页数	文件大小	规格书
4页	41K
描述
General Purpose and Switching Applications

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数据手册

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KSE8355T 数据手册

KSE2955T

General Purpose and Switching Applications

•

DC Current Gain Specified to I = 10 A

High Current Gain Bandwidth Product : f = 2MHz (Min.)

TO-220

1.Base 2.Collector 3.Emitter

PNP Silicon Transistor

Absolute Maximum Ratings ^{T =25°C unless otherwise noted}

Symbol

Parameter

Value

- 70

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

CBO

CEO

EBO

- 60

- 5

- 10

Base Current

- 6

Collector Dissipation (T =25°C)

°C

Collector Dissipation (T =25°C)

0.6

Junction Temperature

Storage Temperature

150

- 55 ~ 150

STG

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Collector- Emitter Breakdown Voltage

Collector Cut-off Current

Test Condition

Min.

Max.

Units

I = - 200mA, I = 0

-60

CEO

= - 30V, I = 0

-700

-1

µA

Collector Cut-off Current

= - 70V, V (off) = 1.5V

CEX1

CEX2

Collector Cut-off Current

= - 70V, V (off) = 1.5V

-5

@ T = 150°C

Emitter Cut-off Current

* DC Current Gain

= - 5V, I = 0

-5

EBO

= - 4V, I = - 4A

100

= - 4V, I = - 10A

(sat)

(on)

* Collector-Emitter Saturation Voltage

= - 4A, I = - 0.4A

-1.1

-8

= - 10A, I = - 3.3A

* Base-Emitter ON Voltage

= - 4V, I = - 4A

-1.8

Current Gain Bandwidth Product

= - 10V, I = - 500mA

MHz

* Pulse test: PW≤300µs, duty cycle≤2% Pulse

Rev. A, February 2000

12 3 4

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