是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | SIP | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.92 |
Is Samacsys: | N | 其他特性: | BUILT IN BIAS RESISTORS |
外壳连接: | ISOLATED | 最大集电极电流 (IC): | 4 A |
集电极-发射极最大电压: | 80 V | 配置: | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR |
最小直流电流增益 (hFE): | 750 | JEDEC-95代码: | TO-126 |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | PNP |
最大功率耗散 (Abs): | 40 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
KSE702S | FAIRCHILD |
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Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/ | |
KSE702STU | FAIRCHILD |
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Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/ | |
KSE703 | FAIRCHILD |
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Monolithic Construction With Built-in Base- Emitter Resistors | |
KSE703S | FAIRCHILD |
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Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/ | |
KSE703STU | FAIRCHILD |
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Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/ | |
KSE772 | SEMIHOW |
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Audio Frequency Power Amplifier | |
KSE800 | FAIRCHILD |
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NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR | |
KSE800_01 | FAIRCHILD |
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Monolithic Construction With Built-in Base-Emitter Resistors | |
KSE800S | FAIRCHILD |
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Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/ | |
KSE800STU | ONSEMI |
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NPN外延硅达林顿晶体管 |