是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Transferred | 零件包装代码: | TO-220 |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 7.87 |
最大集电极电流 (IC): | 10 A | 集电极-发射极最大电压: | 60 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 60 |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
JESD-609代码: | e3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | PNP | 最大功率耗散 (Abs): | 50 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | NO | 端子面层: | Matte Tin (Sn) |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 40 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
KSE5020 | FAIRCHILD |
获取价格 |
Feature | |
KSE5020AS | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 3A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic | |
KSE5020O | FAIRCHILD |
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暂无描述 | |
KSE5020R | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 3A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic | |
KSE5020S | ROCHESTER |
获取价格 |
3A, 500V, NPN, Si, POWER TRANSISTOR, TO-126 | |
KSE5020S | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 3A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic | |
KSE5020Y | FAIRCHILD |
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Power Bipolar Transistor, 3A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic | |
KSE5740 | FAIRCHILD |
获取价格 |
High Voltage Power Switching In Inductive Circuits | |
KSE5740TU | FAIRCHILD |
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Power Bipolar Transistor, 8A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast | |
KSE5741 | FAIRCHILD |
获取价格 |
High Voltage Power Switching In Inductive Circuits |