是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | Reach Compliance Code: | unknown |
风险等级: | 5.44 | 最大集电极电流 (IC): | 3 A |
集电极-发射极最大电压: | 500 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 8 | JEDEC-95代码: | TO-126 |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e3 |
湿度敏感等级: | NOT APPLICABLE | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | NPN |
认证状态: | COMMERCIAL | 表面贴装: | NO |
端子面层: | MATTE TIN | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 18 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
KSE5020Y | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 3A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic | |
KSE5740 | FAIRCHILD |
获取价格 |
High Voltage Power Switching In Inductive Circuits | |
KSE5740TU | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 8A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast | |
KSE5741 | FAIRCHILD |
获取价格 |
High Voltage Power Switching In Inductive Circuits | |
KSE5741J69Z | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 8A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast | |
KSE5741TU | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 8A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast | |
KSE5742 | FAIRCHILD |
获取价格 |
High Voltage Power Switching In Inductive Circuits | |
KSE-61-K3 | MSYSTEM |
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Plug-in Signal Conditioners K-UNIT | |
KSE-61-K3/Q | MSYSTEM |
获取价格 |
Plug-in Signal Conditioners K-UNIT | |
KSE-61-L3 | MSYSTEM |
获取价格 |
Plug-in Signal Conditioners K-UNIT |