Datasheet > KSE5020

KSE5020

更新时间： 2024-11-13 22:47:31

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
4页	47K
描述
Feature

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中文翻译

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数据手册

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KSE5020 数据手册

KSE5020

Feature

•

High Voltage, High Quality High Speed Switching : t =0.1µs

WIDE SOA

TO-126

1. Emitter 2.Collector 3.Base

NPN Silicon Transistor

Absolute Maximum Ratings ^{T =25°C unless otherwise noted}

Symbol

Parameter

Value

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current (DC)

Collector Current (Pulse)

Base Current (DC)

800

CBO

CEO

EBO

500

Collector Dissipation (T =25°C)

°C

Junction Temperature

Storage Temperature

150

- 55 ~ 150

STG

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Test Condition

Min.

Typ.

Max. Units

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector-Emitter Sustaining Voltage

= 1mA, I = 0

800

500

CBO

CEO

EBO

= 5mA, R =∞

I = 1mA, I = 0

(sus)

= 1.5A, I 1=-I 2= 0.6A

500

CEX

L = 2mH, Clamped

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

= 500V, I = 0

µA

CBO

EBO

= 5V, I = 0

= 5V, I = 0.3A

FE1

FE2

= 5V, I = 1.5A

(sat)

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Output Capacitance

= 1.5A, I = 0.3A

1.5

= 10V, f = 1MHz

MHz

µs

Current Gain Bandwidth Product

Turn ON Time

= 10V, I = 0.3A

= 200V

0.5

5I 1 = -2.5I 2=I =2A

RL = 100Ω

Storage Time

µs

Fall Time

0.3

µs

Classification

15 ~ 30

20 ~ 40

30 ~ 50

FE1

Rev. A1, June 2001

12 3 4

中文翻译

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KSE5020O	FAIRCHILD	获取价格	暂无描述
KSE5020R	FAIRCHILD	获取价格	Power Bipolar Transistor, 3A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic
KSE5020S	ROCHESTER	获取价格	3A, 500V, NPN, Si, POWER TRANSISTOR, TO-126
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