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KSE45H11 PDF预览

KSE45H11

更新时间: 2024-11-19 11:15:15
品牌 Logo 应用领域
安森美 - ONSEMI 局域网开关晶体管
页数 文件大小 规格书
6页 159K
描述
PNP外延硅晶体管

KSE45H11 技术参数

是否无铅: 不含铅生命周期:Lifetime Buy
包装说明:FLANGE MOUNT, R-PSFM-T3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:1.43最大集电极电流 (IC):10 A
集电极-发射极最大电压:80 V配置:SINGLE
最小直流电流增益 (hFE):60JEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
功耗环境最大值:1.67 W最大功率耗散 (Abs):50 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):40 MHz
VCEsat-Max:1 VBase Number Matches:1

KSE45H11 数据手册

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