Datasheet > KSE350STU

KSE350STU

更新时间： 2024-09-26 12:26:43

品牌	Logo	应用领域
美台 - DIODES		晶体晶体管局域网
页数	文件大小	规格书
4页	43K
描述
High Voltage General Purpose Applications

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KSE350STU 数据手册

KSE350

High Voltage General Purpose Applications

•

High Collector-Emitter Breakdown Voltage

Suitable for Transformer

Complement to KSE340

TO-126

1. Emitter 2.Collector 3.Base

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings ^{T =25°C unless otherwise noted}

Symbol

Parameter

Value

- 300

- 5

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

CBO

CEO

EBO

- 500

°C

Collector Dissipation (T =25°C)

Junction Temperature

Storage Temperature

150

- 65 ~ 150

STG

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Collector-Emitter Breakdown Voltage

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

Test Condition

Min.

Max. Units

= - 1mA, I = 0

-300

CEO

CBO

= - 300V, I = 0

-100

240

µA

= - 3V, I = 0

EBO

= - 10V, I = - 50mA

Rev. A1, December 2000

12 3 4

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