KSE45H

更新时间： 2024-11-17 22:47:31

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体开关晶体管
页数	文件大小	规格书
4页	43K
描述
General Purpose Power Switching Applications

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中文翻译

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技术参数
数据手册

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KSE45H 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.55
Is Samacsys：	N	Base Number Matches：	1

KSE45H 数据手册

KSE45H Series

General Purpose Power Switching Applications

•

Low Collector-Emitter Saturation Voltage: V (sat) = -1V (MAX)@-8A

Fast Switching Speeds

Complement to KSE44H

TO-220

1.Base 2.Collector 3.Emitter

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings ^{T =25°C unless otherwise noted}

Symbol

Parameter

Value

Units

Collector-Emitter Voltage

: KSE45H 1,2

- 30

- 45

- 60

- 80

CEO

: KSE45H 4,5

: KSE45H 7,8

: KSE45H 10,11

Emitter- Base Voltage

Collector Current (DC)

*Collector Current (Pulse)

- 5

- 10

EBO

- 20

Collector Dissipation (T =25°C)

°C

Collector Dissipation (T =25°C)

1.67

Junction Temperature

Storage Temperature

150

- 55 ~ 150

STG

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Collector Cut-off Current

Emitter Cut-off Current

*DC Current Gain

Test Condition

Min.

Typ.

Max.

-10

Units

µA

= Rated, V , V = 0

CES

EBO

CEO

= - 5V, I = 0

-100

µA

: KSE45H 1, 4, 7 10

: KSE45H 2, 5, 8,11

= - 1V, I = - 2A

(sat)

*Collector-Emitter Saturation Voltage

: KSE45H 1, 4, 7 10

= - 8A, I = - 0.8A

-1

: KSE45H 2, 5, 8,11

= - 8A, I = - 0.4A

*Base-Emitter Saturation Voltage

Current Gain Bandwidth Product

Output Capacitance

Turn ON Time

= - 8A, I = - 0.8A

-1.5

MHz

= - 10V, I = - 0.5A

230

135

500

100

= - 10V, f = 1MHz

=20V, I = - 5A

= - I = - 0.5A

Storage Time

STG

Fall Time

* Pulse test: PW≤300µs, Duty cycle≤2%

Rev. A1, June 2001

12 3 4

中文翻译

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与KSE45H相关器件

型号	品牌	获取价格	描述	数据表
KSE45H1	FAIRCHILD	获取价格	General Purpose Power Switching Applications
KSE45H10	SAMSUNG	获取价格	Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
KSE45H10	FAIRCHILD	获取价格	General Purpose Power Switching Applications
KSE45H10J69Z	FAIRCHILD	获取价格	Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
KSE45H11	ROCHESTER	获取价格	10A, 80V, PNP, Si, POWER TRANSISTOR, TO-220AB, TO-220, 3 PIN
KSE45H11	SAMSUNG	获取价格	Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
KSE45H11	ONSEMI	获取价格	PNP外延硅晶体管
KSE45H11	FAIRCHILD	获取价格	General Purpose Power Switching Applications
KSE45H11J69Z	FAIRCHILD	获取价格	Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
KSE45H11TU	ROCHESTER	获取价格	10A, 80V, PNP, Si, POWER TRANSISTOR, TO-220AB, TO-220, 3 PIN