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KSE44H PDF预览

KSE44H

更新时间: 2024-11-20 22:47:31
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体开关晶体管局域网
页数 文件大小 规格书
4页 44K
描述
General Purpose Power Switching Applications

KSE44H 数据手册

 浏览型号KSE44H的Datasheet PDF文件第2页浏览型号KSE44H的Datasheet PDF文件第3页浏览型号KSE44H的Datasheet PDF文件第4页 
KSE44H Series  
General Purpose Power Switching Applications  
Low Collector-Emitter Saturation Voltage : V (sat) = 1V (Max.) @ 8A  
Fast Switching Speeds  
Complement to KSE45H  
CE  
TO-220  
1.Base 2.Collector 3.Emitter  
1
NPN Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
Units  
V
Collector-Emitter Voltage  
: KSE44H 1,2  
30  
45  
60  
80  
V
V
V
V
CEO  
: KSE44H 4,5  
: KSE44H 7,8  
: KSE44H 10,11  
V
Emitter- Base Voltage  
Collector Current (DC)  
*Collector Current (Pulse)  
5
10  
V
A
EBO  
I
I
C
20  
A
CP  
P
P
Collector Dissipation (T =25°C)  
50  
W
W
°C  
°C  
C
C
Collector Dissipation (T =25°C)  
1.67  
150  
C
a
T
T
Junction Temperature  
Storage Temperature  
J
- 55 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Collector Cut-off Current  
Emitter Cut-off Current  
*DC Current Gain  
Test Condition  
Min.  
Typ.  
Max.  
10  
Units  
µA  
I
I
V
V
= Rated V , V = 0  
CES  
EBO  
CE  
CEO  
EB  
= 5V, I = 0  
100  
µA  
EB  
C
h
FE  
: KSE44H 1,4,7,10  
: KSE44H 2,5,8,11  
V
= 1V, I = 2A  
35  
60  
CE  
C
V
V
(sat)  
(sat)  
*Collector-Emitter Saturation Voltage  
: KSE44H 1, 4, 7 10  
CE  
I
I
= 8A, I = 0.8A  
= 8A, I = 0.4A  
B
1
1
V
V
C
C
B
: KSE44H 2, 5, 8,11  
*Base-Emitter Saturation Voltage  
Current Gain Bandwidth Product  
Output Capacitance  
Turn ON Time  
I
= 8A, I = 0.8A  
1.5  
V
MHz  
pF  
ns  
BE  
ob  
C
B
f
V
V
V
= 10V, I = 0.5A  
50  
130  
300  
500  
140  
T
CE  
CB  
CC  
C
C
= 10V, f = 1MHz  
t
t
t
=20V, I = 5A  
C
ON  
I
= - I = 0.5A  
Storage Time  
B1  
B2  
ns  
STG  
Fall Time  
ns  
F
* Pulse test: PW300µs, Duty cycle2%  
©2001 Fairchild Semiconductor Corporation  
Rev. A1, June 2001  

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