Datasheet > KSE13001H1BU

KSE13001H1BU

更新时间： 2024-12-01 06:51:11

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
5页	61K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

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KSE13001H1BU 数据手册

KSE13001

Color TV Chroma Output

•

Collector-Base Voltage : V

Current Gain Bandwidth Product : f =50MHz (TYP.)

=400V

CBO

TO-92

1. Base 2. Collector 3. Emitter

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings ^{T =25°C unless otherwise noted}

Symbol

Parameter

Ratings

400

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

CBO

400

CEO

EBO

100

°C

Collector Power Dissipation

Junction Temperature

Storage Temperature

600

150

-55 ~ +150

°C

STG

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Test Condition

Min.

400

Typ.

Max.

Units

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

I =100µA, I =0

CBO

CEO

EBO

I =5mA, I =0

C B

I =100µA, I =0

=200V, I =0

0.1

µA

CBO

DC Current Gain

=10V, I =20mA

(sat)

Collector-Emitter Saturation Voltage

Current Gain Bandwidth Product

Output Capacitance

I =10mA, I =1mA

0.5

=30V, I =10mA

MHz

=10V, I =0, f=1MHz

Classification

40 ~ 65

55 ~ 80

Rev. A1, June 2001

12 3 4 5

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