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KSE13003H2ASTU PDF预览

KSE13003H2ASTU

更新时间: 2024-11-30 03:48:47
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管功率双极晶体管开关局域网
页数 文件大小 规格书
4页 467K
描述
NPN Silicon Transistor

KSE13003H2ASTU 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-126
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:7.42
Is Samacsys:N最大集电极电流 (IC):1.5 A
集电极-发射极最大电压:400 V配置:SINGLE
最小直流电流增益 (hFE):14JEDEC-95代码:TO-126
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):20 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):4 MHzBase Number Matches:1

KSE13003H2ASTU 数据手册

 浏览型号KSE13003H2ASTU的Datasheet PDF文件第2页浏览型号KSE13003H2ASTU的Datasheet PDF文件第3页浏览型号KSE13003H2ASTU的Datasheet PDF文件第4页 
March 2008  
KSE13003  
NPN Silicon Transistor  
High Voltage Switch Mode Applications  
High Voltage Capability  
High Speed Switching  
Suitable for Switching Regulator and Motor Control  
TO-126  
1
1. Emitter 2.Collector 3.Base  
Absolute Maximum Ratings*  
T
= 25°C unless otherwise noted (notes_1)  
C
Symbol  
Parameter  
Value  
700  
Units  
VCBO  
Collector-Base Voltage  
V
V
VCEO  
VEBO  
IC  
Collector-Emitter Voltage  
Emitter-Base Voltage  
400  
9
V
Collector Current (DC)  
Collector Current (Pulse)  
Base Current  
1.5  
A
ICP  
3
A
IB  
0.75  
20  
A
PC  
Collector Dissipation (TC = 25°C)  
Junction Temperature  
Storage Temperature Range  
W
°C  
°C  
TJ  
150  
TSTG  
-65 ~ 150  
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES_1:  
1) These ratings are based on a maximum junction temperature of 150°C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
h
Classification  
FE  
Classification  
H1  
H2  
H3  
hFE  
*
9 ~ 16  
14~ 21  
19 ~ 26  
* Test on V = 2V, I = 0.5A.  
CE  
C
© 2007 Fairchild Semiconductor Corporation  
KSE13003 Rev. 1.0.0  
www.fairchildsemi.com  
1

KSE13003H2ASTU 替代型号

型号 品牌 替代类型 描述 数据表
FJE3303H2TU FAIRCHILD

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Power Bipolar Transistor, 1.5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plast
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High Voltage Switch Mode Applications

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