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FJE3303H2TU PDF预览

FJE3303H2TU

更新时间: 2024-11-08 21:07:39
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 局域网开关晶体管
页数 文件大小 规格书
6页 67K
描述
Power Bipolar Transistor, 1.5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126, 3 PIN

FJE3303H2TU 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-126
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.67
最大集电极电流 (IC):1.5 A集电极-发射极最大电压:400 V
配置:SINGLE最小直流电流增益 (hFE):14
JEDEC-95代码:TO-126JESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):20 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):4 MHz
Base Number Matches:1

FJE3303H2TU 数据手册

 浏览型号FJE3303H2TU的Datasheet PDF文件第2页浏览型号FJE3303H2TU的Datasheet PDF文件第3页浏览型号FJE3303H2TU的Datasheet PDF文件第4页浏览型号FJE3303H2TU的Datasheet PDF文件第5页浏览型号FJE3303H2TU的Datasheet PDF文件第6页 
FJE3303  
High Voltage Fast-Switching NPN Power Transistor  
High Voltage Capability  
High Switching Speed  
Suitable for Electronic Ballast and Switching Regulator  
TO-126  
1
1. Emitter 2.Collector 3.Base  
Absolute Maximum Ratings  
T
= 25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
700  
400  
9
Units  
V
V
V
Collector-Base Voltage  
V
V
CBO  
CEO  
EBO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current (DC)  
Collector Current (Pulse) *  
Base Current (DC)  
V
I
I
I
I
1.5  
A
C
3
A
CP  
B
0.75  
1.5  
A
Base Current (Pulse) *  
A
BP  
P
Collector Dissipation (T = 25°C)  
20  
W
°C  
°C  
C
C
T
T
Junction Temperature  
Storage Temperature  
150  
-65 ~ 150  
J
STG  
* Pulse Test: Pulse Width = 5ms, Duty Cycle 10%  
©2005 Fairchild Semiconductor Corporation  
FJE3303 Rev. B  
1
www.fairchildsemi.com  

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型号 品牌 替代类型 描述 数据表
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