是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Transferred | 零件包装代码: | TO-126 |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.67 |
最大集电极电流 (IC): | 1.5 A | 集电极-发射极最大电压: | 400 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 14 |
JEDEC-95代码: | TO-126 | JESD-30 代码: | R-PSFM-T3 |
JESD-609代码: | e3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 20 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | NO | 端子面层: | Matte Tin (Sn) |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 4 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
KSE13003H2ASTU | FAIRCHILD |
类似代替 |
NPN Silicon Transistor | |
FJE3303H2 | FAIRCHILD |
类似代替 |
High Voltage Switch Mode Applications |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FJE3303O | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 1.5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plast | |
FJE3303R | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 1.5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plast | |
FJE5304D | FAIRCHILD |
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High Voltage High Speed Power Switch Application | |
FJE5304D | ONSEMI |
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NPN 型三重扩散平面硅晶体管 | |
FJE5304D_05 | FAIRCHILD |
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NPN Triple Diffused Planar Silicon Transistor | |
FJE5304DTU | FAIRCHILD |
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NPN Triple Diffused Planar Silicon Transistor, TO-126 (SOT32) UNIFIED DRAWING (TSTU, TSSTU | |
FJE5304DTU | ONSEMI |
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NPN 型三重扩散平面硅晶体管 | |
FJF-66-K | MSYSTEM |
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Space-saving Plug-in Signal Conditioners F-UNIT | |
FJF-66-K/1 | MSYSTEM |
获取价格 |
Space-saving Plug-in Signal Conditioners F-UNIT | |
FJF-66-K/2 | MSYSTEM |
获取价格 |
Space-saving Plug-in Signal Conditioners F-UNIT |