Datasheet > FJE5304D_05

FJE5304D_05

更新时间： 2024-12-01 03:36:55

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管
页数	文件大小	规格书
6页	479K
描述
NPN Triple Diffused Planar Silicon Transistor

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FJE5304D_05 数据手册

FJE5304D

NPN Triple Diffused Planar Silicon Transistor

High Voltage High Speed Power Switch Application

•

Wide Safe Operating Area

Built-in Free Wheeling diode

Suitable for Electronic Ballast Application

Small Variance in Storage Time

Equivalent Circuit

TO-126

1.Emitter 2.Collector 3.Base

Absolute Maximum Ratings T_C= 25°C unless otherwise noted

Symbol

V_CBO

Parameter

Collector-Base Voltage

Value

700

Units

V_CEO

V_EBO

I_C

Collector-Emitter Voltage

Emitter-Base Voltage

400

Collector Current (DC)

* Collector Current (Pulse)

Base Current (DC)

I_CP

I_B

I_BP

* Base Current (Pulse)

Collector Dissipation (T_C=25°C)

Storage Temperature

P_C

°C

T_STG

- 65 ~ 150

* Pulse Test Pulse Width = 5ms, Duty Cycle ≥ 1.0%

Electrical Characteristics T_C= 25°C unless otherwise noted

Symbol

Parameter

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

Test Condition

Min. Typ. Max. Units

BV_CBO

I_C= 1mA, I_E= 0

700

400

BV_CEO

BV_EBO

I_CES

I_C= 5mA, I_B= 0

I_E= 1mA, I_C= 0

V_CE= 700V, V_EB= 0

V_CE= 400V, I_B= 0

V_EB= 12V, I_C= 0

100

250

100

µA

I_CEO

Collector Cut-off Current

I_EBO

Emitter Cut-off Current

h_FE

DC Current Gain

V_CE= 5V, I_C= 10mA

V_CE= 5V, I_C= 2A

FJE5304D Rev. B1

www.fairchildsemi.com

12 3 4 5 6

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