生命周期: | Obsolete | 零件包装代码: | SIP |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 3 |
Reach Compliance Code: | unknown | HTS代码: | 8541.29.00.95 |
风险等级: | 5.72 | 最大集电极电流 (IC): | 1.5 A |
集电极-发射极最大电压: | 400 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 14 | JEDEC-95代码: | TO-126 |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | NPN |
最大功率耗散 (Abs): | 20 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 4 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FJE3303R | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 1.5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plast | |
FJE5304D | FAIRCHILD |
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High Voltage High Speed Power Switch Application | |
FJE5304D | ONSEMI |
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NPN 型三重扩散平面硅晶体管 | |
FJE5304D_05 | FAIRCHILD |
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NPN Triple Diffused Planar Silicon Transistor | |
FJE5304DTU | FAIRCHILD |
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NPN Triple Diffused Planar Silicon Transistor, TO-126 (SOT32) UNIFIED DRAWING (TSTU, TSSTU | |
FJE5304DTU | ONSEMI |
获取价格 |
NPN 型三重扩散平面硅晶体管 | |
FJF-66-K | MSYSTEM |
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Space-saving Plug-in Signal Conditioners F-UNIT | |
FJF-66-K/1 | MSYSTEM |
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Space-saving Plug-in Signal Conditioners F-UNIT | |
FJF-66-K/2 | MSYSTEM |
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Space-saving Plug-in Signal Conditioners F-UNIT | |
FJF-66-K/3 | MSYSTEM |
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Space-saving Plug-in Signal Conditioners F-UNIT |